JPS5654370A - Testing method of semiconductor - Google Patents

Testing method of semiconductor

Info

Publication number
JPS5654370A
JPS5654370A JP13144179A JP13144179A JPS5654370A JP S5654370 A JPS5654370 A JP S5654370A JP 13144179 A JP13144179 A JP 13144179A JP 13144179 A JP13144179 A JP 13144179A JP S5654370 A JPS5654370 A JP S5654370A
Authority
JP
Japan
Prior art keywords
switch
semiconductor device
source voltage
rise
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13144179A
Other languages
Japanese (ja)
Inventor
Hiroshi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13144179A priority Critical patent/JPS5654370A/en
Publication of JPS5654370A publication Critical patent/JPS5654370A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To surely detect the operation unstability of a semiconductor device which is liable to occur when the rise of source voltage is slow by providing a rise delay circuit of source voltage between a switch and the semiconductor device.
CONSTITUTION: A resistor 5 and a capacitor 6 are provided between a semiconductor device 1 and a switch 2. The delay time from the rise point of source voltage of the case when the switch 2 is closed may be set as desired by the product of the resistance 5 and the capacitor 6. It is equally well to provide the resistor 5 between the switch 2 and a DC electric power source 3.
COPYRIGHT: (C)1981,JPO&Japio
JP13144179A 1979-10-11 1979-10-11 Testing method of semiconductor Pending JPS5654370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13144179A JPS5654370A (en) 1979-10-11 1979-10-11 Testing method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13144179A JPS5654370A (en) 1979-10-11 1979-10-11 Testing method of semiconductor

Publications (1)

Publication Number Publication Date
JPS5654370A true JPS5654370A (en) 1981-05-14

Family

ID=15058027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13144179A Pending JPS5654370A (en) 1979-10-11 1979-10-11 Testing method of semiconductor

Country Status (1)

Country Link
JP (1) JPS5654370A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03120316A (en) * 1989-10-02 1991-05-22 Sumitomo Metal Ind Ltd Production of nonoriented silicon steel sheet
KR20150108387A (en) 2013-02-22 2015-09-25 제이에프이 스틸 가부시키가이샤 Hot-rolled steel sheet for producing non-oriented electrical steel sheet and method of producing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03120316A (en) * 1989-10-02 1991-05-22 Sumitomo Metal Ind Ltd Production of nonoriented silicon steel sheet
KR20150108387A (en) 2013-02-22 2015-09-25 제이에프이 스틸 가부시키가이샤 Hot-rolled steel sheet for producing non-oriented electrical steel sheet and method of producing same

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