JPS5649518A - Wafer treating desk - Google Patents

Wafer treating desk

Info

Publication number
JPS5649518A
JPS5649518A JP12413679A JP12413679A JPS5649518A JP S5649518 A JPS5649518 A JP S5649518A JP 12413679 A JP12413679 A JP 12413679A JP 12413679 A JP12413679 A JP 12413679A JP S5649518 A JPS5649518 A JP S5649518A
Authority
JP
Japan
Prior art keywords
desk
treating
desks
parts
disk type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12413679A
Other languages
Japanese (ja)
Inventor
Noboru Tatefuru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12413679A priority Critical patent/JPS5649518A/en
Publication of JPS5649518A publication Critical patent/JPS5649518A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To make the flow of reaction gas to be smooth when a semiconductor wafer treating desk providing with a revolving large disk type rotary desk having rotating small disk type wafer treating desks on the upper side is to be constituted in a reaction room by a method wherein guide parts having a sloping sectional area are provided on the surface side at the circumferential parts of the small disk type wafer treating desks. CONSTITUTION:A revolving large disk type rotary desk 2 is arranged in a bell jar 1 constituting a reaction room, heaters 4 are provided at the back and plural rotating wafer treating desks 3 putting wafers 5 on them are provided on the surface of the rotary desk 2 to constitute a semiconductor wafer treating desk. In this constitution, concave parts are formed on the rotary desk 2 at the parts to be arranged with the treating desks 3, the treating desks 3 are sank in this places and guide parts 7 having slope on the surface are provided at their outer circumference. By this way, a reaction gas can flow smoothly on the guide parts 7, and especially the thickness of formed film at the circumferential part of the wafer 5 and the quality of film become uniform.
JP12413679A 1979-09-28 1979-09-28 Wafer treating desk Pending JPS5649518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12413679A JPS5649518A (en) 1979-09-28 1979-09-28 Wafer treating desk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12413679A JPS5649518A (en) 1979-09-28 1979-09-28 Wafer treating desk

Publications (1)

Publication Number Publication Date
JPS5649518A true JPS5649518A (en) 1981-05-06

Family

ID=14877804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12413679A Pending JPS5649518A (en) 1979-09-28 1979-09-28 Wafer treating desk

Country Status (1)

Country Link
JP (1) JPS5649518A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147967A2 (en) * 1983-12-09 1985-07-10 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS61281517A (en) * 1985-06-06 1986-12-11 Shin Etsu Handotai Co Ltd Susceptor for epitaxial wafer
US4839145A (en) * 1986-08-27 1989-06-13 Massachusetts Institute Of Technology Chemical vapor deposition reactor
US4961399A (en) * 1988-03-22 1990-10-09 U.S. Philips Corporation Epitaxial growth reactor provided with a planetary support
JP2009071210A (en) * 2007-09-18 2009-04-02 Covalent Materials Tokuyama Corp Susceptor and epitaxial growth system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147967A2 (en) * 1983-12-09 1985-07-10 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS61281517A (en) * 1985-06-06 1986-12-11 Shin Etsu Handotai Co Ltd Susceptor for epitaxial wafer
US4839145A (en) * 1986-08-27 1989-06-13 Massachusetts Institute Of Technology Chemical vapor deposition reactor
US4961399A (en) * 1988-03-22 1990-10-09 U.S. Philips Corporation Epitaxial growth reactor provided with a planetary support
JP2009071210A (en) * 2007-09-18 2009-04-02 Covalent Materials Tokuyama Corp Susceptor and epitaxial growth system

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