JPS5646572A - Monolithic integrated circuit having twoo dimensional imageesensor - Google Patents

Monolithic integrated circuit having twoo dimensional imageesensor

Info

Publication number
JPS5646572A
JPS5646572A JP12449280A JP12449280A JPS5646572A JP S5646572 A JPS5646572 A JP S5646572A JP 12449280 A JP12449280 A JP 12449280A JP 12449280 A JP12449280 A JP 12449280A JP S5646572 A JPS5646572 A JP S5646572A
Authority
JP
Japan
Prior art keywords
imageesensor
twoo
dimensional
integrated circuit
monolithic integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12449280A
Other languages
English (en)
Inventor
Kotsuho Ruudorufu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5646572A publication Critical patent/JPS5646572A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP12449280A 1979-09-11 1980-09-08 Monolithic integrated circuit having twoo dimensional imageesensor Pending JPS5646572A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792936704 DE2936704A1 (de) 1979-09-11 1979-09-11 Monolithisch integrierte schaltung mit einem zweidimensionalen bildsensor

Publications (1)

Publication Number Publication Date
JPS5646572A true JPS5646572A (en) 1981-04-27

Family

ID=6080567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12449280A Pending JPS5646572A (en) 1979-09-11 1980-09-08 Monolithic integrated circuit having twoo dimensional imageesensor

Country Status (3)

Country Link
EP (1) EP0025177A3 (ja)
JP (1) JPS5646572A (ja)
DE (1) DE2936704A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030151B2 (ja) * 1979-10-19 1985-07-15 松下電子工業株式会社 固体撮像装置
JPS56164681A (en) * 1980-05-22 1981-12-17 Matsushita Electronics Corp Solidstate image pick-up device
DE3138294A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit
US4435730A (en) * 1982-03-08 1984-03-06 Rca Corporation Low noise CCD output
JPS5930376A (ja) * 1982-08-13 1984-02-17 Olympus Optical Co Ltd 固体撮像装置
JPH0831991B2 (ja) * 1984-04-17 1996-03-27 オリンパス光学工業株式会社 固体撮像装置
KR940000953Y1 (ko) * 1991-04-13 1994-02-25 금성일렉트론 주식회사 Ccd의 리셋트 게이트 구조

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3826926A (en) * 1972-11-29 1974-07-30 Westinghouse Electric Corp Charge coupled device area imaging array
US4001501A (en) * 1973-05-02 1977-01-04 Rca Corporation Signal processing circuits for charge-transfer, image-sensing arrays
US3904818A (en) * 1974-02-28 1975-09-09 Rca Corp Removal of dark current spikes from image sensor output signals
DE2611771C3 (de) * 1976-03-19 1978-09-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betrieb einer CID-Sensormatrix
US4087833A (en) * 1977-01-03 1978-05-02 Reticon Corporation Interlaced photodiode array employing analog shift registers
US4104543A (en) * 1977-02-22 1978-08-01 Hughes Aircraft Company Multichannel CCD signal subtraction system
CA1099409A (en) * 1977-04-07 1981-04-14 Lawrence G. Heller Charge transfer device differencing circuit
FR2390853A1 (fr) * 1977-05-13 1978-12-08 Thomson Csf Dispositif differentiel a transfert de charges et filtre comportant un tel dispositif
JPS605108B2 (ja) * 1977-08-01 1985-02-08 株式会社日立製作所 固体擦像装置

Also Published As

Publication number Publication date
DE2936704A1 (de) 1981-03-26
EP0025177A2 (de) 1981-03-18
EP0025177A3 (de) 1983-04-13

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