JPS5645067A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS5645067A
JPS5645067A JP12064679A JP12064679A JPS5645067A JP S5645067 A JPS5645067 A JP S5645067A JP 12064679 A JP12064679 A JP 12064679A JP 12064679 A JP12064679 A JP 12064679A JP S5645067 A JPS5645067 A JP S5645067A
Authority
JP
Japan
Prior art keywords
type
resistor
amplifier
diode
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12064679A
Other languages
Japanese (ja)
Inventor
Kenichi Oba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12064679A priority Critical patent/JPS5645067A/en
Publication of JPS5645067A publication Critical patent/JPS5645067A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate variations in the amplification degree of an amplifier by composing a feedback resistor and an input resistor in a well shape respectively when an IC is made by a C-MOS type inversion amplifier and a diode for gate protection wherein a shallow region for a diode is provided by closing to a well region for the input resistor. CONSTITUTION:A terminal applying an input signal IN is connected to a C-MOS type inversion amplifier A composing of an N channel type FET element QP and a P channel type FET element QN through an input resistor Ri and the output is sent to the next stage circuit. The output terminal of the resistor Ri is also connected to a diode DP for gate protection and a feedback resistor RF is connected across the input side and the output side of the amplifier A in parallel. In this composition, the input resistor Ri is composed of a P type well region 11 provided on an N type semiconductor substrate 10 and a P<+> type region 14 for the diode is provided by closing to the P type well region 11. Similarly, the feedback fesistor RF is also composed of a P type well region 12 provided in the substrate 10. And the variations in the amplification degree of an amplifier decided by the ratio of RF/Ri will be reduced.
JP12064679A 1979-09-21 1979-09-21 Integrated circuit device Pending JPS5645067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12064679A JPS5645067A (en) 1979-09-21 1979-09-21 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12064679A JPS5645067A (en) 1979-09-21 1979-09-21 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5645067A true JPS5645067A (en) 1981-04-24

Family

ID=14791367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12064679A Pending JPS5645067A (en) 1979-09-21 1979-09-21 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5645067A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257573A (en) * 1984-06-04 1985-12-19 Matsushita Electronics Corp Semiconductor device
JP2007060306A (en) * 2005-08-24 2007-03-08 Matsushita Electric Ind Co Ltd Photocurrent amplifier circuit and optical pickup apparatus
JP2007104136A (en) * 2005-09-30 2007-04-19 Matsushita Electric Ind Co Ltd Photoelectric current amplifier circuit, and optical pickup apparatus
US7233466B2 (en) 2002-08-02 2007-06-19 Nec Electronics Corporation Input protection circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257573A (en) * 1984-06-04 1985-12-19 Matsushita Electronics Corp Semiconductor device
US7233466B2 (en) 2002-08-02 2007-06-19 Nec Electronics Corporation Input protection circuit
JP2007060306A (en) * 2005-08-24 2007-03-08 Matsushita Electric Ind Co Ltd Photocurrent amplifier circuit and optical pickup apparatus
JP2007104136A (en) * 2005-09-30 2007-04-19 Matsushita Electric Ind Co Ltd Photoelectric current amplifier circuit, and optical pickup apparatus
JP4646772B2 (en) * 2005-09-30 2011-03-09 パナソニック株式会社 Photocurrent amplifier circuit and optical pickup device

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