JPS5645067A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPS5645067A JPS5645067A JP12064679A JP12064679A JPS5645067A JP S5645067 A JPS5645067 A JP S5645067A JP 12064679 A JP12064679 A JP 12064679A JP 12064679 A JP12064679 A JP 12064679A JP S5645067 A JPS5645067 A JP S5645067A
- Authority
- JP
- Japan
- Prior art keywords
- type
- resistor
- amplifier
- diode
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To eliminate variations in the amplification degree of an amplifier by composing a feedback resistor and an input resistor in a well shape respectively when an IC is made by a C-MOS type inversion amplifier and a diode for gate protection wherein a shallow region for a diode is provided by closing to a well region for the input resistor. CONSTITUTION:A terminal applying an input signal IN is connected to a C-MOS type inversion amplifier A composing of an N channel type FET element QP and a P channel type FET element QN through an input resistor Ri and the output is sent to the next stage circuit. The output terminal of the resistor Ri is also connected to a diode DP for gate protection and a feedback resistor RF is connected across the input side and the output side of the amplifier A in parallel. In this composition, the input resistor Ri is composed of a P type well region 11 provided on an N type semiconductor substrate 10 and a P<+> type region 14 for the diode is provided by closing to the P type well region 11. Similarly, the feedback fesistor RF is also composed of a P type well region 12 provided in the substrate 10. And the variations in the amplification degree of an amplifier decided by the ratio of RF/Ri will be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12064679A JPS5645067A (en) | 1979-09-21 | 1979-09-21 | Integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12064679A JPS5645067A (en) | 1979-09-21 | 1979-09-21 | Integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5645067A true JPS5645067A (en) | 1981-04-24 |
Family
ID=14791367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12064679A Pending JPS5645067A (en) | 1979-09-21 | 1979-09-21 | Integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5645067A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60257573A (en) * | 1984-06-04 | 1985-12-19 | Matsushita Electronics Corp | Semiconductor device |
JP2007060306A (en) * | 2005-08-24 | 2007-03-08 | Matsushita Electric Ind Co Ltd | Photocurrent amplifier circuit and optical pickup apparatus |
JP2007104136A (en) * | 2005-09-30 | 2007-04-19 | Matsushita Electric Ind Co Ltd | Photoelectric current amplifier circuit, and optical pickup apparatus |
US7233466B2 (en) | 2002-08-02 | 2007-06-19 | Nec Electronics Corporation | Input protection circuit |
-
1979
- 1979-09-21 JP JP12064679A patent/JPS5645067A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60257573A (en) * | 1984-06-04 | 1985-12-19 | Matsushita Electronics Corp | Semiconductor device |
US7233466B2 (en) | 2002-08-02 | 2007-06-19 | Nec Electronics Corporation | Input protection circuit |
JP2007060306A (en) * | 2005-08-24 | 2007-03-08 | Matsushita Electric Ind Co Ltd | Photocurrent amplifier circuit and optical pickup apparatus |
JP2007104136A (en) * | 2005-09-30 | 2007-04-19 | Matsushita Electric Ind Co Ltd | Photoelectric current amplifier circuit, and optical pickup apparatus |
JP4646772B2 (en) * | 2005-09-30 | 2011-03-09 | パナソニック株式会社 | Photocurrent amplifier circuit and optical pickup device |
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