JPS5645056A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5645056A
JPS5645056A JP12064979A JP12064979A JPS5645056A JP S5645056 A JPS5645056 A JP S5645056A JP 12064979 A JP12064979 A JP 12064979A JP 12064979 A JP12064979 A JP 12064979A JP S5645056 A JPS5645056 A JP S5645056A
Authority
JP
Japan
Prior art keywords
grooves
semiconductor
split
semiconductor plate
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12064979A
Other languages
Japanese (ja)
Inventor
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12064979A priority Critical patent/JPS5645056A/en
Publication of JPS5645056A publication Critical patent/JPS5645056A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a high reliability device by previously performing positive oxidation for the surfaces of splitted grooves when a semiconductor plate is split into chips with small area wherein a short-circuit accident is prevented. CONSTITUTION:A semiconductor plate 21 having Ag bumps 22 corresponding to function regions at one main surface and having an electrode layer 23 at the other main surface is provided. SiO2 films 24 are opened between each function region and grooves 25 are formed to cover the surfaces of the grooves with positive oxide films 26. Next, the semiconductor plate 21 is split by the grooves 25 to form semiconductor chips 27. Each chip 27 is inserted between a couple of electrodes 28, 29 for holding. And the external circumference is surrounded by a glass tube 30 for hermetic sealing. In this composition, no short-circuit accident will occur and reliability will be improved even if conductive foreign substances are mixed with a semiconductor device at the time of hermetic sealing because the surfaces of the grooves have positive oxide films.
JP12064979A 1979-09-21 1979-09-21 Manufacture of semiconductor device Pending JPS5645056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12064979A JPS5645056A (en) 1979-09-21 1979-09-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12064979A JPS5645056A (en) 1979-09-21 1979-09-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5645056A true JPS5645056A (en) 1981-04-24

Family

ID=14791446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12064979A Pending JPS5645056A (en) 1979-09-21 1979-09-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5645056A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003085727A3 (en) * 2002-04-08 2004-08-05 Infineon Technologies Ag Semiconductor chip comprising a protective layer and a corresponding production method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003085727A3 (en) * 2002-04-08 2004-08-05 Infineon Technologies Ag Semiconductor chip comprising a protective layer and a corresponding production method

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