JPS5635469A - Manufacture of complementary semiconductor device - Google Patents
Manufacture of complementary semiconductor deviceInfo
- Publication number
- JPS5635469A JPS5635469A JP11146579A JP11146579A JPS5635469A JP S5635469 A JPS5635469 A JP S5635469A JP 11146579 A JP11146579 A JP 11146579A JP 11146579 A JP11146579 A JP 11146579A JP S5635469 A JPS5635469 A JP S5635469A
- Authority
- JP
- Japan
- Prior art keywords
- well
- forming
- semiconductor device
- si3n4
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To easily and exactly obtain the well of the complementary semiconductor device by forming a pattern for forming a field region, then forming the well thereon, and thereafter forming a field insulating film thereon. CONSTITUTION:An Si3N4 23 is selectively formed on an SiO2 22 on an N type Si substrate 21. A resist mask 25 is used to implant P type ion thereon, and the well 26 is formed thereon. The resist mask 25 is then removed, is driven in, and the well 26' is thus formed. With the film 23 as a mask a field oxide film 27 is formed thereon, the Si3N4 23 and the SiO2 22 are then removed, and a gate oxide film 28 is formed thereon. Thereafter the complementary SOS devices are respectively formed on the substrate 21 and the well 26'. According to this configuration, pattern information for forming the well can be secured in the respective steps without increasing the steps, there is no step of exposing the Si surface, and the characteristics cannot be deteriorated, and the device can be accurately and easily manufactured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11146579A JPS5635469A (en) | 1979-08-30 | 1979-08-30 | Manufacture of complementary semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11146579A JPS5635469A (en) | 1979-08-30 | 1979-08-30 | Manufacture of complementary semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5635469A true JPS5635469A (en) | 1981-04-08 |
Family
ID=14561923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11146579A Pending JPS5635469A (en) | 1979-08-30 | 1979-08-30 | Manufacture of complementary semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5635469A (en) |
-
1979
- 1979-08-30 JP JP11146579A patent/JPS5635469A/en active Pending
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