JPS5635465A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5635465A
JPS5635465A JP11034179A JP11034179A JPS5635465A JP S5635465 A JPS5635465 A JP S5635465A JP 11034179 A JP11034179 A JP 11034179A JP 11034179 A JP11034179 A JP 11034179A JP S5635465 A JPS5635465 A JP S5635465A
Authority
JP
Japan
Prior art keywords
electrode
electrodes
layer
conduction
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11034179A
Other languages
Japanese (ja)
Inventor
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11034179A priority Critical patent/JPS5635465A/en
Publication of JPS5635465A publication Critical patent/JPS5635465A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To obtain the semiconductor device which conducts a bipolar transistor operation by utilizing approximately equal steps to that of an MOSIC. CONSTITUTION:An N<-> type islandlike layer 1 is formed on an insulating substrate 11, and an oxide thin film 15 and a polysilicon layer 16 are selectively laminated thereon. P<+> type layers 12, 14 are formed by an ion implantation. An opening is perforated at the oxide film 15, and the layer 13 is made in ohmic contact with the polysilicon layer 16. Electrodes C, E, B are attached to the layers 13, 14, 16 respectively therethrough. In case that the threshold voltage of the electrode B is negative when the electrode E is grounded, the electrode C is applied with -5V and the electrode B is applied with 0V, the conduction between the electrodes C and E is interrupted. When the potential between the electrodes B and E becomes approx. -7V, the conduction between the electrodes C and E is conducted even if the threshold voltage of the electrode B is lower than this voltage. Since an electric current flows thus through the entire silicon layer, it is much larger than the channel current of an MOSFET, and this accordingly conducts in a bipolar transistor operation, and the thickness of the silicon layer can be increased to approx. several mu.
JP11034179A 1979-08-31 1979-08-31 Semiconductor device Pending JPS5635465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11034179A JPS5635465A (en) 1979-08-31 1979-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11034179A JPS5635465A (en) 1979-08-31 1979-08-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5635465A true JPS5635465A (en) 1981-04-08

Family

ID=14533290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11034179A Pending JPS5635465A (en) 1979-08-31 1979-08-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5635465A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113657A (en) * 1984-06-28 1986-01-21 New Japan Radio Co Ltd Semiconductor device
JPS62205660A (en) * 1986-02-26 1987-09-10 ハリス　コーポレイション Cross bipolar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113657A (en) * 1984-06-28 1986-01-21 New Japan Radio Co Ltd Semiconductor device
JPS62205660A (en) * 1986-02-26 1987-09-10 ハリス　コーポレイション Cross bipolar transistor

Similar Documents

Publication Publication Date Title
KR890013796A (en) Semiconductor device and manufacturing method
JPS5688354A (en) Semiconductor integrated circuit device
US5089871A (en) Increased voltage mos semiconductor device
GB1457800A (en) Semiconductor devices
JPS562672A (en) Schottky barrier diode
JPS5635465A (en) Semiconductor device
JP3249891B2 (en) Semiconductor device and method of using the same
JPS55132072A (en) Mos semiconductor device
JPS54156483A (en) Non-volatile semiconductor memory device
JPS57176781A (en) Superconductive device
JPH09246545A (en) Semiconductor element for power
JPH0329326A (en) Junction field-effect transistor
JPS57103348A (en) Semiconductor memory device
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
IE792474L (en) Switching device
JPS56133870A (en) Mos field effect semiconductor device with high breakdown voltage
JPS54129984A (en) Manufacture of semiconductor device
JPS6439065A (en) Thin film field-effect transistor
JPS54146975A (en) Protection circuit of semiconductor device
JPS63283071A (en) Semiconductor device
JPS5691472A (en) High-voltage resisting mos type semiconductor
JPS5553460A (en) Semiconductor integrated circuit
JPS5799764A (en) Semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS572574A (en) Insulated gate type field effect transistor