JPS5635453A - Reverse connection protecting device for mos type ic - Google Patents

Reverse connection protecting device for mos type ic

Info

Publication number
JPS5635453A
JPS5635453A JP11081179A JP11081179A JPS5635453A JP S5635453 A JPS5635453 A JP S5635453A JP 11081179 A JP11081179 A JP 11081179A JP 11081179 A JP11081179 A JP 11081179A JP S5635453 A JPS5635453 A JP S5635453A
Authority
JP
Japan
Prior art keywords
electric current
resistor
flow
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11081179A
Other languages
Japanese (ja)
Other versions
JPS6210035B2 (en
Inventor
Osamu Shintaku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11081179A priority Critical patent/JPS5635453A/en
Publication of JPS5635453A publication Critical patent/JPS5635453A/en
Publication of JPS6210035B2 publication Critical patent/JPS6210035B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To prevent the destruction of MOSIC, when the latter is connected reversely, by detecting an electric current flowing through a protective diode or a parasitic diode in the IC and breaking a power supply therefor. CONSTITUTION:N<+> type layers 6-10 are formed on a P type substrate 5, a P type layer 4 is formed in the layer 6 as an input resistor, and the N-channel MOSIC is thus formed. In this case, the parasitic diode is formed between the layers 8, 9 and a P type substrate 5 in addition to a protective diode formed of the substrate 5 and of the layer 6. If the IC is correctly inserted, no electric current will flow through a detecting resistor 13, and the power supply of the IC 1 remains on. If the IC is reversely connected, an electric current will flow through the resistor 13, and a positive voltage is thus applied to the reverse phase input terminal of a differential amplifier 14. The resistor 15 is regulated, the amplifier 14 is lowered at the output, only in the reverse connection, to a ground potential, transistors 18, 20 are then shut off sequentially, and an electric current in the IC 1 is rapidly interrupted, and excessive current flow is prevented into the IC. This configuration can accordingly prevent the destruction or deterioration of the IC 1.
JP11081179A 1979-08-29 1979-08-29 Reverse connection protecting device for mos type ic Granted JPS5635453A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11081179A JPS5635453A (en) 1979-08-29 1979-08-29 Reverse connection protecting device for mos type ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11081179A JPS5635453A (en) 1979-08-29 1979-08-29 Reverse connection protecting device for mos type ic

Publications (2)

Publication Number Publication Date
JPS5635453A true JPS5635453A (en) 1981-04-08
JPS6210035B2 JPS6210035B2 (en) 1987-03-04

Family

ID=14545252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11081179A Granted JPS5635453A (en) 1979-08-29 1979-08-29 Reverse connection protecting device for mos type ic

Country Status (1)

Country Link
JP (1) JPS5635453A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2509932A1 (en) * 1981-07-17 1983-01-21 Mitel Corp CIRCUIT FOR STARTING A CMOS SEMICONDUCTOR CIRCUIT

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6391134A (en) * 1986-10-03 1988-04-21 Asahi Glass Co Ltd Powder granulator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2509932A1 (en) * 1981-07-17 1983-01-21 Mitel Corp CIRCUIT FOR STARTING A CMOS SEMICONDUCTOR CIRCUIT

Also Published As

Publication number Publication date
JPS6210035B2 (en) 1987-03-04

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