JPS5635423A - Method of correcting photomask by polishing - Google Patents
Method of correcting photomask by polishingInfo
- Publication number
- JPS5635423A JPS5635423A JP10699380A JP10699380A JPS5635423A JP S5635423 A JPS5635423 A JP S5635423A JP 10699380 A JP10699380 A JP 10699380A JP 10699380 A JP10699380 A JP 10699380A JP S5635423 A JPS5635423 A JP S5635423A
- Authority
- JP
- Japan
- Prior art keywords
- flaw
- felt
- mask
- hemispherical
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To heighten the efficiency of correction of an acute angled flaw on a photomask made by using a reticle, by rotating a hemispherical felt while thrusting it at the flaw to change it into a hemispherical recess to reduce the diffusion of light. CONSTITUTION:A stage 13 is horizontally mounted with supports 15 in a cup- shaped cover 12 whose top is open. A photomask 1' having an acute flaw to be corrected is placed on the stage. A nozzle 14 is protruded in the cover 2 to feed an abrasive material to polish the mask 1'. The cover 12 can be moved back and forth and right and left. A polisher comprising a motor 7, a gear unit 9 and a rotary shaft 10 is supported by a stand 8 so that the polisher is located over the mask 1'. A hemispherical polishing felt 11 is attached to the rotary shaft 10. The mask 1' is displaced to thrust the felt 11 on the flaw part of the felt to polish it. The acute angled flaw (a) is thus changed into a gentle recess (b) to reduce the diffusion of light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10699380A JPS5635423A (en) | 1980-08-04 | 1980-08-04 | Method of correcting photomask by polishing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10699380A JPS5635423A (en) | 1980-08-04 | 1980-08-04 | Method of correcting photomask by polishing |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5635423A true JPS5635423A (en) | 1981-04-08 |
JPS571891B2 JPS571891B2 (en) | 1982-01-13 |
Family
ID=14447752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10699380A Granted JPS5635423A (en) | 1980-08-04 | 1980-08-04 | Method of correcting photomask by polishing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5635423A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6680486B1 (en) * | 1984-05-18 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
WO2005124455A1 (en) * | 2004-06-22 | 2005-12-29 | Hoya Corporation | Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask |
JP2006039525A (en) * | 2004-06-22 | 2006-02-09 | Hoya Corp | Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02307933A (en) * | 1989-05-18 | 1990-12-21 | Nishi Nenshi Kk | Apparatus for producing fancy yarn |
-
1980
- 1980-08-04 JP JP10699380A patent/JPS5635423A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6680486B1 (en) * | 1984-05-18 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
WO2005124455A1 (en) * | 2004-06-22 | 2005-12-29 | Hoya Corporation | Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask |
JP2006039525A (en) * | 2004-06-22 | 2006-02-09 | Hoya Corp | Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask |
US7862960B2 (en) | 2004-06-22 | 2011-01-04 | Hoya Corporation | Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks |
KR101018567B1 (en) * | 2004-06-22 | 2011-03-03 | 호야 가부시키가이샤 | Gray tone mask blank, gray tone mask and production method therefor, and production method for liquid crystal display device |
KR101022600B1 (en) * | 2004-06-22 | 2011-03-16 | 호야 가부시키가이샤 | Gray tone mask blank, gray tone mask and production method therefor |
US8039178B2 (en) | 2004-06-22 | 2011-10-18 | Hoya Corporation | Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks |
Also Published As
Publication number | Publication date |
---|---|
JPS571891B2 (en) | 1982-01-13 |
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