JPS5632755A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5632755A JPS5632755A JP10783579A JP10783579A JPS5632755A JP S5632755 A JPS5632755 A JP S5632755A JP 10783579 A JP10783579 A JP 10783579A JP 10783579 A JP10783579 A JP 10783579A JP S5632755 A JPS5632755 A JP S5632755A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- substrate
- recesses
- type
- flat portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000001125 extrusion Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain high resistance in the semiconductor device without increasing a planar occupying area by forming recesses on the flat portion of a polycrystalline layer formed on a semiconductor substrate or a substrate when forming a resistance element on the device and forming the element from the flat portion through the recesses again to the flat portion. CONSTITUTION:An SiO2 film 5 is formed selectively on an N type Si substrate 1, P type impurity ions are implanted through openings of the film 5 into the substrate 1, and a plurality of islandlike P type regions 2 are thereafter formed by an extrusion diffusing process. Then, only the film 5 between the regions 2 is removed, a shallow P type region 3 is diffused in the substrate 1 while including the regions 2, and recesses 6 are formed in the regions 2 by a reactive sputter etching process or the like. The recesses are so formed longitudinally in planner view as to be wider than the regions 2, narrower than the region 2 in lateral direction, and further shallower in depth than the regions 2. In this manner uneven diffused resistance element can be thus formed with the regions 2, 3 as a high resistance element. This operation is repeated as required, and further higher resistance can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10783579A JPS5632755A (en) | 1979-08-24 | 1979-08-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10783579A JPS5632755A (en) | 1979-08-24 | 1979-08-24 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5632755A true JPS5632755A (en) | 1981-04-02 |
Family
ID=14469242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10783579A Pending JPS5632755A (en) | 1979-08-24 | 1979-08-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5632755A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61228663A (en) * | 1985-04-02 | 1986-10-11 | Nec Corp | Semiconductor device |
| US5316978A (en) * | 1993-03-25 | 1994-05-31 | Northern Telecom Limited | Forming resistors for intergrated circuits |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5285488A (en) * | 1976-01-09 | 1977-07-15 | Hitachi Ltd | Semiconductor resistance element |
-
1979
- 1979-08-24 JP JP10783579A patent/JPS5632755A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5285488A (en) * | 1976-01-09 | 1977-07-15 | Hitachi Ltd | Semiconductor resistance element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61228663A (en) * | 1985-04-02 | 1986-10-11 | Nec Corp | Semiconductor device |
| US5316978A (en) * | 1993-03-25 | 1994-05-31 | Northern Telecom Limited | Forming resistors for intergrated circuits |
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