JPS5627966A - Transistor - Google Patents
TransistorInfo
- Publication number
- JPS5627966A JPS5627966A JP10684880A JP10684880A JPS5627966A JP S5627966 A JPS5627966 A JP S5627966A JP 10684880 A JP10684880 A JP 10684880A JP 10684880 A JP10684880 A JP 10684880A JP S5627966 A JPS5627966 A JP S5627966A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7927647A GB2056165A (en) | 1979-08-08 | 1979-08-08 | Hot-electron or hot-hole transistor |
GB7927647 | 1979-08-08 | ||
GB7943911 | 1979-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5627966A true JPS5627966A (en) | 1981-03-18 |
JPS5937865B2 JPS5937865B2 (en) | 1984-09-12 |
Family
ID=10507070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10684880A Expired JPS5937865B2 (en) | 1979-08-08 | 1980-08-05 | transistor |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5937865B2 (en) |
GB (1) | GB2056165A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5872646U (en) * | 1981-11-11 | 1983-05-17 | ロ−ズベイ八重洲ビル石川島建材工業株式会社 | Positioning device for sliding members on loading racks, etc. |
JPS63268275A (en) * | 1987-04-25 | 1988-11-04 | Nippon Telegr & Teleph Corp <Ntt> | Schottky barrier width control transistor |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4449140A (en) * | 1981-12-24 | 1984-05-15 | National Research Development Corporation | Semi-conductor barrier switching devices |
GB2191036A (en) * | 1986-05-23 | 1987-12-02 | Philips Electronic Associated | Hot charge-carrier transistors |
GB8717361D0 (en) * | 1987-07-22 | 1987-08-26 | Gen Electric Co Plc | Hot electron transistors |
-
1979
- 1979-08-08 GB GB7927647A patent/GB2056165A/en not_active Withdrawn
-
1980
- 1980-08-05 JP JP10684880A patent/JPS5937865B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5872646U (en) * | 1981-11-11 | 1983-05-17 | ロ−ズベイ八重洲ビル石川島建材工業株式会社 | Positioning device for sliding members on loading racks, etc. |
JPS63268275A (en) * | 1987-04-25 | 1988-11-04 | Nippon Telegr & Teleph Corp <Ntt> | Schottky barrier width control transistor |
Also Published As
Publication number | Publication date |
---|---|
GB2056165A (en) | 1981-03-11 |
JPS5937865B2 (en) | 1984-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3071139D1 (en) | Vertical field effect transistor | |
GB2055364B (en) | 4-aroylimidazol-2-ones | |
JPS5645079A (en) | High cuttoffffrequency electriccfielddeffect transistor | |
DE3067237D1 (en) | Transistor structure | |
GB2126779B (en) | Thin-film transistor | |
GB2056236B (en) | Drain | |
GB2067748B (en) | Retroreflectometer | |
GB2045410B (en) | Float-drier | |
JPS5680161A (en) | Bipolar transistor | |
DE3063218D1 (en) | A field effect transistor | |
JPS5562766A (en) | Transistor | |
GB2051479B (en) | Light-controllable transistor | |
JPS567481A (en) | Field effect type transistor | |
JPS54122981A (en) | Transistor | |
NZ195101A (en) | 5-substitutedmethyl-2-chloro-4-substitutedthiazoles | |
GB2042259B (en) | Lateral pnp transistor | |
GB2045248B (en) | Phenylmorphans | |
JPS5627966A (en) | Transistor | |
GB2057489B (en) | Arakylation | |
GB2062635B (en) | Aspirin-isopropylantipyrine | |
DE3067349D1 (en) | Transistor structure | |
JPS5596294A (en) | Microomanipulator | |
GB2064340B (en) | Pin-table | |
GB2060461B (en) | Belt-knife splitting-machine | |
JPS55134968A (en) | Transistor switch |