JPS5625973A - Ion etching apparatus - Google Patents
Ion etching apparatusInfo
- Publication number
- JPS5625973A JPS5625973A JP10150079A JP10150079A JPS5625973A JP S5625973 A JPS5625973 A JP S5625973A JP 10150079 A JP10150079 A JP 10150079A JP 10150079 A JP10150079 A JP 10150079A JP S5625973 A JPS5625973 A JP S5625973A
- Authority
- JP
- Japan
- Prior art keywords
- sweep
- axis
- thin film
- depth direction
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To measure the component of thin film in the depth direction, by providing with the sweep circuit which performs deflecting sweep of ion beam in x axis and y axis direction after generating, drawing out, accelerating and converging the ion.
CONSTITUTION: Component of thin film of semiconductor etc. in the depth direction, is known by ionizing an inactive gas and giving a shock on the surface of sample. For example, thermion is generated by the the filament 1 and introduced inactive gas is ionized and then, ionized gas is drawn out by the draw-out electrode 2. Moreover, ionized gas is accelerated by the control.grid 3 and is converged by the converging lens 4. Deflecting sweep of converged ion beam is performed in x axis and y axis by the sweep circuit 5 and sweep in y axis direction is performed based on the saw tooth signal and that of in x axis direction is performed by the functional wave signal. Hereby, section having the inclination, is exposed in the thin film 6 on the substrate 7 and component distribution in the depth direction is obtained by irradiating finely contracted incident electron and measuring gradually moving the sample stand.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10150079A JPS5625973A (en) | 1979-08-08 | 1979-08-08 | Ion etching apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10150079A JPS5625973A (en) | 1979-08-08 | 1979-08-08 | Ion etching apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5625973A true JPS5625973A (en) | 1981-03-12 |
Family
ID=14302342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10150079A Pending JPS5625973A (en) | 1979-08-08 | 1979-08-08 | Ion etching apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5625973A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184526A (en) * | 1983-04-05 | 1984-10-19 | Agency Of Ind Science & Technol | Formation of pattern |
-
1979
- 1979-08-08 JP JP10150079A patent/JPS5625973A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184526A (en) * | 1983-04-05 | 1984-10-19 | Agency Of Ind Science & Technol | Formation of pattern |
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