JPS5621358A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5621358A
JPS5621358A JP9711379A JP9711379A JPS5621358A JP S5621358 A JPS5621358 A JP S5621358A JP 9711379 A JP9711379 A JP 9711379A JP 9711379 A JP9711379 A JP 9711379A JP S5621358 A JPS5621358 A JP S5621358A
Authority
JP
Japan
Prior art keywords
capacity
poly
software
oxide film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9711379A
Other languages
Japanese (ja)
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9711379A priority Critical patent/JPS5621358A/en
Publication of JPS5621358A publication Critical patent/JPS5621358A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent errors of software in a semiconductor memory and to improve integration too by providing capacity through a transistor and a bit wire in spread condition. CONSTITUTION:A field oxide film 14 and a gate oxide film 15 are provided on a p- type Si substrate 10 and doped poly Si layers 16 are selectively formed. Next, n<+>- layers 17, 18 are provided to make an oxide film 19 on the surface of the poly Si layer. A word wire WL and capacity electrodes 20 by doped poly Si are formed by selectively opening windows on the oxide films 15, 19. The surfaces are covered by insulating films 21 with suitable dielectric constant to make a Vss electrode 22 on the surfaces. In this composition, the poly Si layer simultaneously formed with the word wire becomes one side of the electrodes of capacity and the whole area except the word wire WL will be utilized as capacity and a big capacity will be obtained. Furthermore, a depletion layer will not be formed. Therefore, it is hard to encounter errors of software. In this way, it resists against serrors of software and a small sized and high integration memory device will be obtained.
JP9711379A 1979-07-30 1979-07-30 Semiconductor memory device Pending JPS5621358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9711379A JPS5621358A (en) 1979-07-30 1979-07-30 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9711379A JPS5621358A (en) 1979-07-30 1979-07-30 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5621358A true JPS5621358A (en) 1981-02-27

Family

ID=14183514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9711379A Pending JPS5621358A (en) 1979-07-30 1979-07-30 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5621358A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60149160A (en) * 1983-07-11 1985-08-06 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン High efficiency dynamic random access memory and method of producing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114285A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Mis type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114285A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Mis type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60149160A (en) * 1983-07-11 1985-08-06 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン High efficiency dynamic random access memory and method of producing same

Similar Documents

Publication Publication Date Title
JPS5457875A (en) Semiconductor nonvolatile memory device
KR890005840A (en) Manufacturing Method of Semiconductor Device Having Ohmic Contact
JPS5696850A (en) Semiconductor device and manufacture thereof
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
KR930024165A (en) Semiconductor device and manufacturing method thereof
JPS5649570A (en) Semiconductor memory and its manufacturing process
JPS56107571A (en) Semiconductor memory storage device
JPS5621358A (en) Semiconductor memory device
JPS5519820A (en) Semiconductor device
JPS5787177A (en) Semiconductor memory device
JPS54156483A (en) Non-volatile semiconductor memory device
JPS561559A (en) One-transistor type dynamic memory cell
JPS5565458A (en) Memory cell
JPS6433961A (en) Mos composite memory device
JPS56104462A (en) Semiconductor memory device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5736868A (en) Manufacture of nonvolatile semiconductor memory device
JPS56138949A (en) Semiconductor memory element
JPS5552254A (en) Semiconductor device
JPS6428950A (en) Semiconductor storage device and manufacture thereof
JPS55141749A (en) Dynamic memory cell
JPS55125648A (en) Semiconductor integrated circuit
JPS577968A (en) Semiconductor device
JPS56144575A (en) Semiconductor memory
JPS56105667A (en) Semiconductor memory device