JPS5617063A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5617063A
JPS5617063A JP9359179A JP9359179A JPS5617063A JP S5617063 A JPS5617063 A JP S5617063A JP 9359179 A JP9359179 A JP 9359179A JP 9359179 A JP9359179 A JP 9359179A JP S5617063 A JPS5617063 A JP S5617063A
Authority
JP
Japan
Prior art keywords
film
type
emitter
base
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9359179A
Other languages
Japanese (ja)
Inventor
Yasuo Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9359179A priority Critical patent/JPS5617063A/en
Publication of JPS5617063A publication Critical patent/JPS5617063A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Abstract

PURPOSE:To obtain a resistor stable for 1OMEGA-1kOMEGA of resistance value in a final stage transistor of Darlington connection by forming a thin film resistance layer made of oxide metal between the base and the emitter thereof and heating at higher than 200 deg.C in the oxide atmosphere. CONSTITUTION:An N<->-type layer is epitaxially grown on an N<+>-type Si substrate, is used as a collector region 13, and a P-type layer 12 is diffused or epitaxially grown to become a base region. Then, a plurality of N<+>-type emitter regions 11 are diffused therein, an SiO2 film 17 is coated on the entire surface, and openings are perforated thereat to form emitter and base electrodes 14, 15. Thereafter, a stabilizing resistance film 18 such as Ti or the like is coated on the film 17 in the opening, an electrode metal such as Al or the like is laminated not to be oxidized at low temperature with preferable adherence thereon, is etched to form electrodes 14, 15, and is heated at higher than 200 deg.C in oxide atmosphere. In this manner, only the surface layer of the film 18 is oxidized to form the residual film 18 at desired resistance value.
JP9359179A 1979-07-20 1979-07-20 Manufacture of semiconductor device Pending JPS5617063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9359179A JPS5617063A (en) 1979-07-20 1979-07-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9359179A JPS5617063A (en) 1979-07-20 1979-07-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5617063A true JPS5617063A (en) 1981-02-18

Family

ID=14086533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9359179A Pending JPS5617063A (en) 1979-07-20 1979-07-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5617063A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2588449A1 (en) * 1985-10-10 1987-04-17 Disamo Sa PROCESS FOR PRODUCING AND PRESERVING A CARNE PRODUCT

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032022A (en) * 1973-07-23 1975-03-28
JPS5116309A (en) * 1974-07-31 1976-02-09 Nippon Steel Corp KONENDOSHITSUFUNSHAHO
JPS5345676A (en) * 1976-10-06 1978-04-24 Gen Atomic Co Apparatus for coating granules

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032022A (en) * 1973-07-23 1975-03-28
JPS5116309A (en) * 1974-07-31 1976-02-09 Nippon Steel Corp KONENDOSHITSUFUNSHAHO
JPS5345676A (en) * 1976-10-06 1978-04-24 Gen Atomic Co Apparatus for coating granules

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2588449A1 (en) * 1985-10-10 1987-04-17 Disamo Sa PROCESS FOR PRODUCING AND PRESERVING A CARNE PRODUCT

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