JPS56167357A - Tape carrier substrate for semiconductor device - Google Patents

Tape carrier substrate for semiconductor device

Info

Publication number
JPS56167357A
JPS56167357A JP7120380A JP7120380A JPS56167357A JP S56167357 A JPS56167357 A JP S56167357A JP 7120380 A JP7120380 A JP 7120380A JP 7120380 A JP7120380 A JP 7120380A JP S56167357 A JPS56167357 A JP S56167357A
Authority
JP
Japan
Prior art keywords
substrate
tape carrier
bronze foil
carrier substrate
manufacturing process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7120380A
Other languages
Japanese (ja)
Other versions
JPS6257097B2 (en
Inventor
Masao Hayakawa
Takamichi Maeda
Yasunori Senkawa
Masao Kumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7120380A priority Critical patent/JPS56167357A/en
Publication of JPS56167357A publication Critical patent/JPS56167357A/en
Publication of JPS6257097B2 publication Critical patent/JPS6257097B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4839—Assembly of a flat lead with an insulating support, e.g. for TAB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the deformation due to the change in the quality of material in the manufacturing process of the substrate as well as to improve the yield rate for the subject substrate by a method wherein a rolled bronze foil, containing a prescribed quantity of Sn, is used as a conductive metal layer to be used for lamination of a flexible insulating film. CONSTITUTION:As a material for a tape carrier substrate, the polyimide film 2 whereon a rolled bronze foil 3 containing Sn having thickness of 30mum or so is laminated, is used. The Sn content in the bronze foil is to be in the range of 0.05- 0.15wt%. Due to the additioning of the Sn, the strength of the conductive metal layer is increased as compared with pure copper and the quality of the material is stabilized due to the increased temperature of annealing. As a result, the deformation of the conductor layer due to the passing of a roller 1 in the manufacturing process of the substrate and the softening of the conductor layer 3 due to a heat treatment can be prevented. Also, the yielding rate can be improved, because of the improvement in the bonding property of the Sn plated layer.
JP7120380A 1980-05-27 1980-05-27 Tape carrier substrate for semiconductor device Granted JPS56167357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7120380A JPS56167357A (en) 1980-05-27 1980-05-27 Tape carrier substrate for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7120380A JPS56167357A (en) 1980-05-27 1980-05-27 Tape carrier substrate for semiconductor device

Publications (2)

Publication Number Publication Date
JPS56167357A true JPS56167357A (en) 1981-12-23
JPS6257097B2 JPS6257097B2 (en) 1987-11-30

Family

ID=13453875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7120380A Granted JPS56167357A (en) 1980-05-27 1980-05-27 Tape carrier substrate for semiconductor device

Country Status (1)

Country Link
JP (1) JPS56167357A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5978592A (en) * 1982-10-27 1984-05-07 株式会社フジクラ Flexible printed board
EP0349000A2 (en) * 1988-06-30 1990-01-03 Kabushiki Kaisha Toshiba A TAB film tape carrier
EP0389826A1 (en) * 1989-03-20 1990-10-03 Seiko Epson Corporation Arrangement of semiconductor devices and method of and apparatus for mounting semiconductor devices
US4985749A (en) * 1988-03-22 1991-01-15 Bull S.A. Substrate for very large scale integrated circuit and apparatus for selective tinning of the substrate leads

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5978592A (en) * 1982-10-27 1984-05-07 株式会社フジクラ Flexible printed board
JPH0254675B2 (en) * 1982-10-27 1990-11-22 Fujikura Ltd
US4985749A (en) * 1988-03-22 1991-01-15 Bull S.A. Substrate for very large scale integrated circuit and apparatus for selective tinning of the substrate leads
US5081949A (en) * 1988-03-22 1992-01-21 Bull S.A. Apparatus for selective tinning of substrate leads
EP0349000A2 (en) * 1988-06-30 1990-01-03 Kabushiki Kaisha Toshiba A TAB film tape carrier
EP0389826A1 (en) * 1989-03-20 1990-10-03 Seiko Epson Corporation Arrangement of semiconductor devices and method of and apparatus for mounting semiconductor devices

Also Published As

Publication number Publication date
JPS6257097B2 (en) 1987-11-30

Similar Documents

Publication Publication Date Title
JPS56167357A (en) Tape carrier substrate for semiconductor device
KR860003362A (en) Self-Promoting Tin Plating of Copper or Copper Alloy Products
US2162362A (en) Asymmetrical conductor
JPS56145514A (en) Thin-film magnetic head
JPS647542A (en) Formation of bump
JPS6486527A (en) Ccb tape carrier
JPS5683823A (en) Production for horizontal thin film magnetic head
GB1267975A (en) Thin film electronic components on flexible substrates and the apparatus and process for producing same
JPS574184A (en) Metallic thin strip for installing semiconductor light-emitting element
JPS5772368A (en) Fusing type semiconductor device and its manufacture
JPS5322365A (en) Resin mold type semiconductor device and its production
JPS5735318A (en) Manufacture of semiconductor device
JPS5779648A (en) Multilayer wiring of semiconductor device
JPS5472676A (en) Lead frame having alloy intermediate layer
JPS54126467A (en) Lead frame for semiconductor device
JPS533066A (en) Electrode formation method
JPS5739190A (en) Preparation of solder plated or tin plated wire
JPS5720374A (en) Method of forming crossover in thermal head
JPS57184244A (en) Metallic member for electronic parts
JPS56129349A (en) Method of manufacturing airtight terminal
JPS5266374A (en) Galvanization of non electrolytic nickel for semiconductor substrate
JPS5441673A (en) Semiconductor device and its manufacture
JPS57145353A (en) Preparation of tape carrier type substrate
JPS5461888A (en) Production of semiconductor thin film
JPH0125388B2 (en)