JPS56152266A - Photo-firing thyristor - Google Patents

Photo-firing thyristor

Info

Publication number
JPS56152266A
JPS56152266A JP5647080A JP5647080A JPS56152266A JP S56152266 A JPS56152266 A JP S56152266A JP 5647080 A JP5647080 A JP 5647080A JP 5647080 A JP5647080 A JP 5647080A JP S56152266 A JPS56152266 A JP S56152266A
Authority
JP
Japan
Prior art keywords
layer
concave section
base layer
type base
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5647080A
Other languages
Japanese (ja)
Inventor
Kenichi Yamanaka
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5647080A priority Critical patent/JPS56152266A/en
Publication of JPS56152266A publication Critical patent/JPS56152266A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To increase phototrigger sensitivity and to shorten turn on time by improviding the shape of the concave section at a light incident part. CONSTITUTION:A thyristor consisting of a P type emitter layer 1, an N type base layer 2, a P type base layer 3, N type emitter layer 4, an anode electrode 5, and cathode electrodes 6 is formed. Wherein, J1, J2 and J3 are junction parts respectively and a depletion layer 7 which effectively work as a light-sensitive layer for trigger light 9 is formed at the J2 section. A concave section 8a effectively feeding the light into the depletion layer 7 is shaped so that the side wall surface of the concave section 8a may have an easy slope and the concave section 8a is formed to reach the N type base layer 2 by crossing over the vicinity of the junction J2 or the junction J2. Furthermore, P<+> type layers 10 are provided at the exposed main surface section 10 of the P type base layer 3. In this way, phototrigger sensitivity improves and free carriers quickly move by the electric field around the side wall of the concave section.
JP5647080A 1980-04-28 1980-04-28 Photo-firing thyristor Pending JPS56152266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5647080A JPS56152266A (en) 1980-04-28 1980-04-28 Photo-firing thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5647080A JPS56152266A (en) 1980-04-28 1980-04-28 Photo-firing thyristor

Publications (1)

Publication Number Publication Date
JPS56152266A true JPS56152266A (en) 1981-11-25

Family

ID=13027985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5647080A Pending JPS56152266A (en) 1980-04-28 1980-04-28 Photo-firing thyristor

Country Status (1)

Country Link
JP (1) JPS56152266A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879250A (en) * 1988-09-29 1989-11-07 The Boeing Company Method of making a monolithic interleaved LED/PIN photodetector array
US6218682B1 (en) * 1997-09-19 2001-04-17 Optiswitch Technology Corporation Optically controlled thyristor
US7057214B2 (en) 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879250A (en) * 1988-09-29 1989-11-07 The Boeing Company Method of making a monolithic interleaved LED/PIN photodetector array
US6218682B1 (en) * 1997-09-19 2001-04-17 Optiswitch Technology Corporation Optically controlled thyristor
US7057214B2 (en) 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches

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