JPS56152266A - Photo-firing thyristor - Google Patents
Photo-firing thyristorInfo
- Publication number
- JPS56152266A JPS56152266A JP5647080A JP5647080A JPS56152266A JP S56152266 A JPS56152266 A JP S56152266A JP 5647080 A JP5647080 A JP 5647080A JP 5647080 A JP5647080 A JP 5647080A JP S56152266 A JPS56152266 A JP S56152266A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- concave section
- base layer
- type base
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010304 firing Methods 0.000 title 1
- 230000035945 sensitivity Effects 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To increase phototrigger sensitivity and to shorten turn on time by improviding the shape of the concave section at a light incident part. CONSTITUTION:A thyristor consisting of a P type emitter layer 1, an N type base layer 2, a P type base layer 3, N type emitter layer 4, an anode electrode 5, and cathode electrodes 6 is formed. Wherein, J1, J2 and J3 are junction parts respectively and a depletion layer 7 which effectively work as a light-sensitive layer for trigger light 9 is formed at the J2 section. A concave section 8a effectively feeding the light into the depletion layer 7 is shaped so that the side wall surface of the concave section 8a may have an easy slope and the concave section 8a is formed to reach the N type base layer 2 by crossing over the vicinity of the junction J2 or the junction J2. Furthermore, P<+> type layers 10 are provided at the exposed main surface section 10 of the P type base layer 3. In this way, phototrigger sensitivity improves and free carriers quickly move by the electric field around the side wall of the concave section.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5647080A JPS56152266A (en) | 1980-04-28 | 1980-04-28 | Photo-firing thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5647080A JPS56152266A (en) | 1980-04-28 | 1980-04-28 | Photo-firing thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56152266A true JPS56152266A (en) | 1981-11-25 |
Family
ID=13027985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5647080A Pending JPS56152266A (en) | 1980-04-28 | 1980-04-28 | Photo-firing thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56152266A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4879250A (en) * | 1988-09-29 | 1989-11-07 | The Boeing Company | Method of making a monolithic interleaved LED/PIN photodetector array |
US6218682B1 (en) * | 1997-09-19 | 2001-04-17 | Optiswitch Technology Corporation | Optically controlled thyristor |
US7057214B2 (en) | 2003-07-01 | 2006-06-06 | Optiswitch Technology Corporation | Light-activated semiconductor switches |
-
1980
- 1980-04-28 JP JP5647080A patent/JPS56152266A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4879250A (en) * | 1988-09-29 | 1989-11-07 | The Boeing Company | Method of making a monolithic interleaved LED/PIN photodetector array |
US6218682B1 (en) * | 1997-09-19 | 2001-04-17 | Optiswitch Technology Corporation | Optically controlled thyristor |
US7057214B2 (en) | 2003-07-01 | 2006-06-06 | Optiswitch Technology Corporation | Light-activated semiconductor switches |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5598858A (en) | Gate turn-off thyristor | |
JPS53112682A (en) | Photo thyristor | |
JPS56152266A (en) | Photo-firing thyristor | |
JPS5778172A (en) | Gate turn-off thyristor | |
JPS5739574A (en) | Semiconductor device | |
JPS5527618A (en) | Planar diode | |
JPS5487488A (en) | Field effect semiconductor device | |
JPS56103466A (en) | Thyristor | |
JPS54128686A (en) | Photo trigger thyristor | |
JPS5269281A (en) | Gate turn-off thyristor | |
JPS5713762A (en) | Light energized semiconductor device | |
JPS574159A (en) | Thyristor | |
JPS5681970A (en) | Semiconductor switching device | |
JPS56124263A (en) | Semiconductor device | |
JPS5595363A (en) | Thyristor | |
JPS5596678A (en) | Reverse conducting thyristor | |
JPS54102993A (en) | Optical semiconductor device | |
JPS5516541A (en) | Reverse-conducting gate turn-off thyristor circuit | |
JPS55113373A (en) | Semiconductor device | |
JPS5724562A (en) | Thyristor | |
JPS57196570A (en) | Thyristor | |
JPS5272188A (en) | Gate turn-off thyristor | |
JPS6437061A (en) | Photodetector | |
JPS5484489A (en) | Thyristor | |
JPS55134972A (en) | Photofiring thyristor |