JPS56152250A - Multilayer wiring method - Google Patents

Multilayer wiring method

Info

Publication number
JPS56152250A
JPS56152250A JP5547180A JP5547180A JPS56152250A JP S56152250 A JPS56152250 A JP S56152250A JP 5547180 A JP5547180 A JP 5547180A JP 5547180 A JP5547180 A JP 5547180A JP S56152250 A JPS56152250 A JP S56152250A
Authority
JP
Japan
Prior art keywords
wire
layer
irradiated
laser beam
connecting part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5547180A
Other languages
Japanese (ja)
Inventor
Takashi Matsuoka
Yasushige Ueoka
Kinya Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5547180A priority Critical patent/JPS56152250A/en
Publication of JPS56152250A publication Critical patent/JPS56152250A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the disconnection of a wire in a multilayer wiring structure using polycrystalline silicon layer by providing a connecting post at the connecting part of the wire of the first layer to the wire of the second layer, thereby eliminating the step produced at the connecting part. CONSTITUTION:A polycrystalline silicon layer 6 is formed by a sputtering method on a semiconductor substrate 1, a laser beam 7 is irradiated to the necessary part to provide conductivity, and the wire 8 of the first layer is thus formed. The layer 6 is again formed, a laser beam 7 is irradiated to the part 9 to be connected with the wire, and a connecting post is thus formed. Subsequently, a polycrystalline layer is, in order to form the wire of the second layer, formed, and the laser beam 7 is irradiated to the part to be formed with the wire. When this operation is repeated, a desired multilayer wire can be formed. Since no step is formed at the connecting part of the wires and the connecting part is flat, the multilayer wire having less disconnection can be obtained.
JP5547180A 1980-04-28 1980-04-28 Multilayer wiring method Pending JPS56152250A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5547180A JPS56152250A (en) 1980-04-28 1980-04-28 Multilayer wiring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5547180A JPS56152250A (en) 1980-04-28 1980-04-28 Multilayer wiring method

Publications (1)

Publication Number Publication Date
JPS56152250A true JPS56152250A (en) 1981-11-25

Family

ID=12999512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5547180A Pending JPS56152250A (en) 1980-04-28 1980-04-28 Multilayer wiring method

Country Status (1)

Country Link
JP (1) JPS56152250A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931353A (en) * 1989-03-01 1990-06-05 The Boeing Company Structure and method for selectively producing a conductive region on a substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931353A (en) * 1989-03-01 1990-06-05 The Boeing Company Structure and method for selectively producing a conductive region on a substrate

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