JPS56125857A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56125857A
JPS56125857A JP2877080A JP2877080A JPS56125857A JP S56125857 A JPS56125857 A JP S56125857A JP 2877080 A JP2877080 A JP 2877080A JP 2877080 A JP2877080 A JP 2877080A JP S56125857 A JPS56125857 A JP S56125857A
Authority
JP
Japan
Prior art keywords
wirings
layer
aluminum
silicon nitride
organosiloxane resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2877080A
Other languages
Japanese (ja)
Other versions
JPS6227745B2 (en
Inventor
Hiroshi Tokunaga
Kazuo Tokitomo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2877080A priority Critical patent/JPS56125857A/en
Publication of JPS56125857A publication Critical patent/JPS56125857A/en
Publication of JPS6227745B2 publication Critical patent/JPS6227745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a multilayer wiring structure in which an insulation of the lower wirings is kept well between each other and a flat degree of a surface formed with the upper wirings by a method wherein a concave between the lower wirings is filled with an organosiloxane resin and covered with inorganic insulating layer. CONSTITUTION:An insulating film 2 such as silicon dioxide is formed on the surface of a semiconductor substrate 1 formed with an element and perforated a window. Then, the lower aluminum wirings 3 are formed. Then, the organosiloxane resin layer 4 is formed and applied a plasma-etching to expose the aluminum wirings 3. Subsequently, a silicon nitride layer 5 is formed by a chemical gaseous phase growing method, and wiring connection window 7 is formed in the silicon nitride layer 5 by using a photoresist mask 6. Thereafter, the photoresist 6 is removed, an aluminum layer being attached and applied a patterning to form the upper wirings 8.
JP2877080A 1980-03-07 1980-03-07 Manufacture of semiconductor device Granted JPS56125857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2877080A JPS56125857A (en) 1980-03-07 1980-03-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2877080A JPS56125857A (en) 1980-03-07 1980-03-07 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56125857A true JPS56125857A (en) 1981-10-02
JPS6227745B2 JPS6227745B2 (en) 1987-06-16

Family

ID=12257636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2877080A Granted JPS56125857A (en) 1980-03-07 1980-03-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56125857A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147203A2 (en) * 1983-12-27 1985-07-03 Kabushiki Kaisha Toshiba Method of forming multilayer interconnections for a semiconductor device
JPS6325929A (en) * 1986-07-17 1988-02-03 Nec Corp Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147203A2 (en) * 1983-12-27 1985-07-03 Kabushiki Kaisha Toshiba Method of forming multilayer interconnections for a semiconductor device
JPS6325929A (en) * 1986-07-17 1988-02-03 Nec Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6227745B2 (en) 1987-06-16

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