JPS56112732A - Exposure device - Google Patents

Exposure device

Info

Publication number
JPS56112732A
JPS56112732A JP1564980A JP1564980A JPS56112732A JP S56112732 A JPS56112732 A JP S56112732A JP 1564980 A JP1564980 A JP 1564980A JP 1564980 A JP1564980 A JP 1564980A JP S56112732 A JPS56112732 A JP S56112732A
Authority
JP
Japan
Prior art keywords
base
mask
pattern
temperature
integrity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1564980A
Other languages
Japanese (ja)
Inventor
Katsuhiro Kawabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1564980A priority Critical patent/JPS56112732A/en
Publication of JPS56112732A publication Critical patent/JPS56112732A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve the integrity of an IC by providing temperature control means at either one of a pattern mask and a supporting base when exposing via the pattern mask between a light source and a semiconductor substrate on the base, thereby minimizing the error in positioning. CONSTITUTION:The supporting base 1 internally contains an element 2 capable of heating and cooling, a thermocouple 3 in the vicinity of the surface of the base detects the temperature, and the element 2 controls the temperature with respect of the difference from the set temperature. On the other hand, A silicon wafer 11 having a resist film is provided at the base, and the mask 7 having a desired chromium pattern 6 is arranged thereon. Ultraviolet rays are irradiated from the light source 8 through a converging lens 9, and the pattern is transferred through the mask 7 onto the silicon wafer 11. Thus, the error in positioning due to the thermal expansion difference can be reduced to 0.2mum, thereby improviding the characteristics of the element and the integrity thereof.
JP1564980A 1980-02-12 1980-02-12 Exposure device Pending JPS56112732A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1564980A JPS56112732A (en) 1980-02-12 1980-02-12 Exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1564980A JPS56112732A (en) 1980-02-12 1980-02-12 Exposure device

Publications (1)

Publication Number Publication Date
JPS56112732A true JPS56112732A (en) 1981-09-05

Family

ID=11894558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1564980A Pending JPS56112732A (en) 1980-02-12 1980-02-12 Exposure device

Country Status (1)

Country Link
JP (1) JPS56112732A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948925A (en) * 1982-09-14 1984-03-21 Dainippon Screen Mfg Co Ltd Cooling method and apparatus for substrate for applying chemical being heated and dried
US4720732A (en) * 1984-01-30 1988-01-19 Canon Kabushiki Kaisha Pattern transfer apparatus
KR100775545B1 (en) 2003-09-04 2007-11-09 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and a Method of Compensating for Thermal Deformation in a Lithographic apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139980A (en) * 1977-05-11 1978-12-06 Philips Nv Method of and device for producing microminiature solid state device
JPS5473578A (en) * 1977-11-24 1979-06-12 Toshiba Corp Pattern exposure method of semiconductor substrate and pattern exposure apparatus
JPS54149586A (en) * 1978-05-17 1979-11-22 Hitachi Ltd Mask aligner

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139980A (en) * 1977-05-11 1978-12-06 Philips Nv Method of and device for producing microminiature solid state device
JPS5473578A (en) * 1977-11-24 1979-06-12 Toshiba Corp Pattern exposure method of semiconductor substrate and pattern exposure apparatus
JPS54149586A (en) * 1978-05-17 1979-11-22 Hitachi Ltd Mask aligner

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948925A (en) * 1982-09-14 1984-03-21 Dainippon Screen Mfg Co Ltd Cooling method and apparatus for substrate for applying chemical being heated and dried
US4720732A (en) * 1984-01-30 1988-01-19 Canon Kabushiki Kaisha Pattern transfer apparatus
KR100775545B1 (en) 2003-09-04 2007-11-09 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and a Method of Compensating for Thermal Deformation in a Lithographic apparatus

Similar Documents

Publication Publication Date Title
US7156924B2 (en) System and method for heating and cooling wafer at accelerated rates
EP0357425A3 (en) An exposure apparatus
US4720732A (en) Pattern transfer apparatus
EP0357423A3 (en) An exposure apparatus
DE2963537D1 (en) Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
GB2143961A (en) Hardening photoresist
KR100890874B1 (en) Temperature-controlled chuck and method for controlling the temperature of a substantially flat object
JPS5473578A (en) Pattern exposure method of semiconductor substrate and pattern exposure apparatus
EP0359497A3 (en) An exposure method
EP0345097A3 (en) Exposure method and apparatus
US6613487B1 (en) Pre-alignment system of exposure apparatus having wafer cooling means and exposure method using the same
JPS56112732A (en) Exposure device
US5849582A (en) Baking of photoresist on wafers
JPS55123131A (en) Exposer for mask alignment
JP3676947B2 (en) Semiconductor device manufacturing equipment, semiconductor device pattern forming method using the same, and semiconductor device manufacturing photoresist using the same
JPS5543844A (en) Method and apparatus for photoresist sensitizing process
KR19990071372A (en) Manufacturing equipment of semiconductor device, pattern formation method of semiconductor device using the same and photoresist for semiconductor device manufacturing using the same
JPS57136325A (en) Transfer device for pattern
JPS59155839A (en) Mask for transferring pattern
US5498769A (en) Method for thermally treating resist film and forming undercut pattern
KR19990034784A (en) Chuck part of exposure equipment
JPS569742A (en) Developing method of photosensitive resin
JPS5491183A (en) Production of semiconductor device
JPS6115146A (en) Exposing device
TW201936355A (en) Exposure apparatus, imprint apparatus, and article manufacturing method can reduce the change in oxygen concentration