JPS56110289A - Manufacture of semiconductor laser element - Google Patents

Manufacture of semiconductor laser element

Info

Publication number
JPS56110289A
JPS56110289A JP1334780A JP1334780A JPS56110289A JP S56110289 A JPS56110289 A JP S56110289A JP 1334780 A JP1334780 A JP 1334780A JP 1334780 A JP1334780 A JP 1334780A JP S56110289 A JPS56110289 A JP S56110289A
Authority
JP
Japan
Prior art keywords
semiconductor layer
electroconductive
layer
type
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1334780A
Other languages
Japanese (ja)
Inventor
Etsuji Omura
Toshio Murotani
Jun Ishii
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1334780A priority Critical patent/JPS56110289A/en
Publication of JPS56110289A publication Critical patent/JPS56110289A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce manhours by forming the first semiconductor layer of the first electroconductive type and the P-N junction second semiconductor layer of the second electroconductive type are formed on an active layer, and forming an impurity diffusion layer reaching the first semiconductor layer from the groove of the second semiconductor layer. CONSTITUTION:The first semiconductor layer of the first electroconductive type and the P-N junction second semiconductor layer of the second electroconductive type are formed on an active layer. The first electroconductive-type impurity is introduced only to the first semiconductor layer part corresponding to a groove part from the groove part formed as the second semiconductor layer, thus forming the third semiconductor layer. For instance, on the active layer 103, the first semiconductor layer 104 of the first electroconductive type and the second semiconductor layers 105, 201 consisting of the two second electroconductive layers are formed. A mesa groove 202 is formed on the surface of the former layers to be followed by the formation of an impurity diffusion layer 108. In this way, it is possible to reduce manhours to obtain a reliable semiconductor laser element.
JP1334780A 1980-02-05 1980-02-05 Manufacture of semiconductor laser element Pending JPS56110289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1334780A JPS56110289A (en) 1980-02-05 1980-02-05 Manufacture of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1334780A JPS56110289A (en) 1980-02-05 1980-02-05 Manufacture of semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS56110289A true JPS56110289A (en) 1981-09-01

Family

ID=11830569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1334780A Pending JPS56110289A (en) 1980-02-05 1980-02-05 Manufacture of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS56110289A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068288A (en) * 1973-10-17 1975-06-07
JPS54152988A (en) * 1978-05-20 1979-12-01 Licentia Gmbh Semiconductor laser and method of fabricating same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068288A (en) * 1973-10-17 1975-06-07
JPS54152988A (en) * 1978-05-20 1979-12-01 Licentia Gmbh Semiconductor laser and method of fabricating same

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