JPS56109897A - Growing method for single crystal having pseudoperovskite structure - Google Patents
Growing method for single crystal having pseudoperovskite structureInfo
- Publication number
- JPS56109897A JPS56109897A JP1337180A JP1337180A JPS56109897A JP S56109897 A JPS56109897 A JP S56109897A JP 1337180 A JP1337180 A JP 1337180A JP 1337180 A JP1337180 A JP 1337180A JP S56109897 A JPS56109897 A JP S56109897A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- diameter
- pseudoperovskite
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a high-quality large-sized single crystal free from a twin, a crack, etc. by remarkably reducing the diameter of part of a growing crystal when a single crystal having pseudoperovskite structure is pulled and grown by the Czochralski method.
CONSTITUTION: When a single crystal of yttrium aluminate, gadolinium aluminate or the like having pseudoperovskite structure is pulled and grown by the Czochralski method, after starting the growth of a seeded crystal, the crystal is left as it is for a while without changing the temp. to make the diameter or the crystal gradually larger than that of the seed crystal. Next, by slowly raising the temp., the diameter of the growing crystal is reduced to form a neck, and then the diameter is gradually increased again to shift the crystal growth to regular operation. Thus, the desired single crystal is grown.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1337180A JPS56109897A (en) | 1980-02-06 | 1980-02-06 | Growing method for single crystal having pseudoperovskite structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1337180A JPS56109897A (en) | 1980-02-06 | 1980-02-06 | Growing method for single crystal having pseudoperovskite structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56109897A true JPS56109897A (en) | 1981-08-31 |
Family
ID=11831221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1337180A Pending JPS56109897A (en) | 1980-02-06 | 1980-02-06 | Growing method for single crystal having pseudoperovskite structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56109897A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106835280A (en) * | 2017-01-17 | 2017-06-13 | 中国科学院福建物质结构研究所 | A kind of rare earth ion Ln3+ doping gadolinium aluminates strontium laser crystal |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4986300A (en) * | 1972-12-22 | 1974-08-19 |
-
1980
- 1980-02-06 JP JP1337180A patent/JPS56109897A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4986300A (en) * | 1972-12-22 | 1974-08-19 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106835280A (en) * | 2017-01-17 | 2017-06-13 | 中国科学院福建物质结构研究所 | A kind of rare earth ion Ln3+ doping gadolinium aluminates strontium laser crystal |
| CN106835280B (en) * | 2017-01-17 | 2019-04-16 | 中国科学院福建物质结构研究所 | A kind of rare earth ion Ln3+Doping gadolinium aluminate strontium laser crystal |
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