JPS56101148A - Photoresist developing method - Google Patents

Photoresist developing method

Info

Publication number
JPS56101148A
JPS56101148A JP258580A JP258580A JPS56101148A JP S56101148 A JPS56101148 A JP S56101148A JP 258580 A JP258580 A JP 258580A JP 258580 A JP258580 A JP 258580A JP S56101148 A JPS56101148 A JP S56101148A
Authority
JP
Japan
Prior art keywords
developer
resist
film
soln
rinsing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP258580A
Other languages
Japanese (ja)
Other versions
JPH0145055B2 (en
Inventor
Hatsuo Nakamura
Chiharu Kato
Toshihiro Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP258580A priority Critical patent/JPS56101148A/en
Publication of JPS56101148A publication Critical patent/JPS56101148A/en
Publication of JPH0145055B2 publication Critical patent/JPH0145055B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To enable development of very high efficiency, increase the work efficiency and provide high resolution to the resulting resist film by converting a resist dissolved in a developer into colloid with a rinsing soln. and removing the colloid to carry out development. CONSTITUTION:When a developer is poured onto a resist film on a wafer by spraying or other method, a rinsing soln. is added to the developer and the adding rate is increased gradually. Thus, the rinsing soln. is allowed to act on the film to remove a resist part from the wafer. Since the rinsing soln.-added developer is allowed to act on the film unlike a conventional method by which processing is carried out with a rinsing soln. alone after processing with a developer, the resist is slowly dissolved in the developer and removed almost thoroughly. In the conventional method the resist dissolved in the developer is made gel at once and can not be removed.
JP258580A 1980-01-16 1980-01-16 Photoresist developing method Granted JPS56101148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP258580A JPS56101148A (en) 1980-01-16 1980-01-16 Photoresist developing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP258580A JPS56101148A (en) 1980-01-16 1980-01-16 Photoresist developing method

Publications (2)

Publication Number Publication Date
JPS56101148A true JPS56101148A (en) 1981-08-13
JPH0145055B2 JPH0145055B2 (en) 1989-10-02

Family

ID=11533442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP258580A Granted JPS56101148A (en) 1980-01-16 1980-01-16 Photoresist developing method

Country Status (1)

Country Link
JP (1) JPS56101148A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144444A (en) * 1980-04-12 1981-11-10 Victor Co Of Japan Ltd Developing method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS512430A (en) * 1974-05-28 1976-01-10 Ibm Mechiru isopuchiru ketongenzozai
JPS556341A (en) * 1978-06-28 1980-01-17 Victor Co Of Japan Ltd Developing method for electron beam resist
JPS55155353A (en) * 1979-05-22 1980-12-03 Tokyo Ohka Kogyo Co Ltd Developer composition
JPS5670547A (en) * 1979-11-15 1981-06-12 Fujitsu Ltd Minute pattern forming method
JPS5671939A (en) * 1979-11-16 1981-06-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Pattern formation
JPS5683740A (en) * 1979-12-13 1981-07-08 Japan Synthetic Rubber Co Ltd Developer for polymer photoresist

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS512430A (en) * 1974-05-28 1976-01-10 Ibm Mechiru isopuchiru ketongenzozai
JPS556341A (en) * 1978-06-28 1980-01-17 Victor Co Of Japan Ltd Developing method for electron beam resist
JPS55155353A (en) * 1979-05-22 1980-12-03 Tokyo Ohka Kogyo Co Ltd Developer composition
JPS5670547A (en) * 1979-11-15 1981-06-12 Fujitsu Ltd Minute pattern forming method
JPS5671939A (en) * 1979-11-16 1981-06-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Pattern formation
JPS5683740A (en) * 1979-12-13 1981-07-08 Japan Synthetic Rubber Co Ltd Developer for polymer photoresist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144444A (en) * 1980-04-12 1981-11-10 Victor Co Of Japan Ltd Developing method

Also Published As

Publication number Publication date
JPH0145055B2 (en) 1989-10-02

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