JPS5599773A - Silicon control rectifier device - Google Patents

Silicon control rectifier device

Info

Publication number
JPS5599773A
JPS5599773A JP799079A JP799079A JPS5599773A JP S5599773 A JPS5599773 A JP S5599773A JP 799079 A JP799079 A JP 799079A JP 799079 A JP799079 A JP 799079A JP S5599773 A JPS5599773 A JP S5599773A
Authority
JP
Japan
Prior art keywords
layer
thyristors
gate
cathode
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP799079A
Other languages
Japanese (ja)
Inventor
Kohei Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP799079A priority Critical patent/JPS5599773A/en
Publication of JPS5599773A publication Critical patent/JPS5599773A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To enlarge the rate effect and increase the gate trigger speed by an externally fitted resistor, by setting the short pattern of the main thyristors and reducing the area of the 3rd base region of the auxiliary thyristors. CONSTITUTION:An n1 layer consists of an n-type 20-30OMEGAcm silicon substrate, and by operating punch-through diffusion of a p-type impurity from both sides of the substrate, it is isolated. Next, by the conventional selective diffusion method, main thyristors P1n1, P2n2 and auxiliary thyristors P1n2, P3n3 are produced. Next, cathode 2, made of Al, wiring 3, which passes a part of the p-layer, which is to become the gate of the main thyristors, and gate electrode 5 of the auxiliary thyristors are formed. Cathode 2 is connected to n2-layer and p2-layer, and the part connected to p2-layer becomes a short part.
JP799079A 1979-01-25 1979-01-25 Silicon control rectifier device Pending JPS5599773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP799079A JPS5599773A (en) 1979-01-25 1979-01-25 Silicon control rectifier device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP799079A JPS5599773A (en) 1979-01-25 1979-01-25 Silicon control rectifier device

Publications (1)

Publication Number Publication Date
JPS5599773A true JPS5599773A (en) 1980-07-30

Family

ID=11680841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP799079A Pending JPS5599773A (en) 1979-01-25 1979-01-25 Silicon control rectifier device

Country Status (1)

Country Link
JP (1) JPS5599773A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101460A (en) * 1981-12-11 1983-06-16 Mitsubishi Electric Corp Photo trigger thyristor
JPS60149164A (en) * 1984-01-17 1985-08-06 Toshiba Corp Semiconductor device
US4949147A (en) * 1985-08-06 1990-08-14 Thomson-Csf Sensitive thyristor with integrated gate-cathode decoupling
EP0396104A2 (en) * 1989-05-01 1990-11-07 Kabushiki Kaisha Toshiba Bidirectional control rectifying semiconductor apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101460A (en) * 1981-12-11 1983-06-16 Mitsubishi Electric Corp Photo trigger thyristor
JPS60149164A (en) * 1984-01-17 1985-08-06 Toshiba Corp Semiconductor device
US4949147A (en) * 1985-08-06 1990-08-14 Thomson-Csf Sensitive thyristor with integrated gate-cathode decoupling
EP0396104A2 (en) * 1989-05-01 1990-11-07 Kabushiki Kaisha Toshiba Bidirectional control rectifying semiconductor apparatus
EP0635889A1 (en) * 1989-05-01 1995-01-25 Kabushiki Kaisha Toshiba Bidirectional control rectifying semiconductor apparatus

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