JPS5595347A - Bias power supply circuit for ultrahigh frequency semiconductor device - Google Patents
Bias power supply circuit for ultrahigh frequency semiconductor deviceInfo
- Publication number
- JPS5595347A JPS5595347A JP263779A JP263779A JPS5595347A JP S5595347 A JPS5595347 A JP S5595347A JP 263779 A JP263779 A JP 263779A JP 263779 A JP263779 A JP 263779A JP S5595347 A JPS5595347 A JP S5595347A
- Authority
- JP
- Japan
- Prior art keywords
- wave length
- power supply
- capacity
- supply circuit
- uhf
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Waveguide Connection Structure (AREA)
Abstract
PURPOSE: To provide a power supply circuit having a flat structure, by connecting among main lines of each UHF element circuit with a half wave length line having higher characteristic impedance than that of main line and grounding the center of half wave length line with a capacity.
CONSTITUTION: Each UHF transmission circuit 1W3 is combined with a bias power supply circuit consitituting with 50Ω line, and is connected with transmission circuits 4W6 of 50Ω through each capacity 13W15 for UHF. The lines 1 and 2 are shorted with the half wave length line 8 of characteristic impedance 90Ω, and the center and electrode 19 grounded by screw 21 are connected with a capacity 16. With the same way, the half wave length line 9 and the capacity 17 are set between the lines 2 and 3. In the terminal 1, quarter wave length line 7 is set on the edge of capcity 12 which is attached on the surface 18 being grounded by the screw 21, and a lead 22 for input of DC bias is set on the terminal 25. These are formed on an isulation base and the back surface 24 is grounded. With this constitution, a circuit in where plural main lines of UHF region are independent each other and connected seriesly, are obtained with flat structure.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP263779A JPS5595347A (en) | 1979-01-12 | 1979-01-12 | Bias power supply circuit for ultrahigh frequency semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP263779A JPS5595347A (en) | 1979-01-12 | 1979-01-12 | Bias power supply circuit for ultrahigh frequency semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5595347A true JPS5595347A (en) | 1980-07-19 |
| JPS6211522B2 JPS6211522B2 (en) | 1987-03-13 |
Family
ID=11534889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP263779A Granted JPS5595347A (en) | 1979-01-12 | 1979-01-12 | Bias power supply circuit for ultrahigh frequency semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5595347A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01160201A (en) * | 1987-12-17 | 1989-06-23 | Nippon Telegr & Teleph Corp <Ntt> | Crossing circuit |
| JPH04135002U (en) * | 1991-06-03 | 1992-12-16 | 株式会社東芝 | Microstrip line cross circuit |
| JPH09153701A (en) * | 1995-11-29 | 1997-06-10 | Toshiba Corp | Monolithic microwave integrated circuit |
-
1979
- 1979-01-12 JP JP263779A patent/JPS5595347A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01160201A (en) * | 1987-12-17 | 1989-06-23 | Nippon Telegr & Teleph Corp <Ntt> | Crossing circuit |
| JPH04135002U (en) * | 1991-06-03 | 1992-12-16 | 株式会社東芝 | Microstrip line cross circuit |
| JPH09153701A (en) * | 1995-11-29 | 1997-06-10 | Toshiba Corp | Monolithic microwave integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6211522B2 (en) | 1987-03-13 |
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