JPS5593586A - Nonnvolatile magnetic film memory - Google Patents

Nonnvolatile magnetic film memory

Info

Publication number
JPS5593586A
JPS5593586A JP145680A JP145680A JPS5593586A JP S5593586 A JPS5593586 A JP S5593586A JP 145680 A JP145680 A JP 145680A JP 145680 A JP145680 A JP 145680A JP S5593586 A JPS5593586 A JP S5593586A
Authority
JP
Japan
Prior art keywords
nonnvolatile
magnetic film
film memory
memory
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP145680A
Other languages
Japanese (ja)
Inventor
Eru Kuuyaa Richiyaado
Daburiyu Sutandoke Uiriamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of JPS5593586A publication Critical patent/JPS5593586A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/44Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
JP145680A 1979-01-11 1980-01-11 Nonnvolatile magnetic film memory Pending JPS5593586A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US250979A 1979-01-11 1979-01-11

Publications (1)

Publication Number Publication Date
JPS5593586A true JPS5593586A (en) 1980-07-16

Family

ID=21701116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP145680A Pending JPS5593586A (en) 1979-01-11 1980-01-11 Nonnvolatile magnetic film memory

Country Status (4)

Country Link
JP (1) JPS5593586A (en)
DE (1) DE3000406A1 (en)
FR (1) FR2446527A1 (en)
GB (1) GB2039431A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8327157D0 (en) * 1983-10-11 1983-11-09 Pollard T F Integrated circuit memories
DE69225920T2 (en) * 1991-03-06 1998-10-15 Mitsubishi Electric Corp Magnetic thin film memory device
US7110312B2 (en) 2000-10-20 2006-09-19 Micromem Technologies Inc. Non-volatile magnetic memory device

Also Published As

Publication number Publication date
DE3000406A1 (en) 1980-07-24
GB2039431A (en) 1980-08-06
FR2446527A1 (en) 1980-08-08

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