JPS5591971A - Thin film forming method - Google Patents

Thin film forming method

Info

Publication number
JPS5591971A
JPS5591971A JP16376578A JP16376578A JPS5591971A JP S5591971 A JPS5591971 A JP S5591971A JP 16376578 A JP16376578 A JP 16376578A JP 16376578 A JP16376578 A JP 16376578A JP S5591971 A JPS5591971 A JP S5591971A
Authority
JP
Japan
Prior art keywords
substrate
thin film
temp
rise
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16376578A
Other languages
Japanese (ja)
Inventor
Akihiko Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16376578A priority Critical patent/JPS5591971A/en
Publication of JPS5591971A publication Critical patent/JPS5591971A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a thin film of high orientation properties at a high speed while preventing a temp. rise of a substrate by setting a magnet behind or by the side of the substrate in formation of the film on the substrate by ion plating. CONSTITUTION:Vacuum deposition substance 2 is put into boat 1, and a negative voltage is applied to substrate 3. Thus, plasma is generated with residual gas, and particles of substance 2 sputtered from heated boat 1 are ionized and deposited on substrate 3. A temp. rise of substrate 3 is prevented by magnet 4 set behind substrate 3, that is, at the reverse side of the evaporation source, and the quality and orientation properties of the thin film deposited are considerably enhanced. In addn., the film deposition speed is increased.
JP16376578A 1978-12-28 1978-12-28 Thin film forming method Pending JPS5591971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16376578A JPS5591971A (en) 1978-12-28 1978-12-28 Thin film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16376578A JPS5591971A (en) 1978-12-28 1978-12-28 Thin film forming method

Publications (1)

Publication Number Publication Date
JPS5591971A true JPS5591971A (en) 1980-07-11

Family

ID=15780276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16376578A Pending JPS5591971A (en) 1978-12-28 1978-12-28 Thin film forming method

Country Status (1)

Country Link
JP (1) JPS5591971A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200755A (en) * 1983-04-22 1984-11-14 ホワイト・エンジニアリング・コ−パレイシヤン Ion plating process
JPS6465261A (en) * 1987-05-25 1989-03-10 Takayuki Katsube Vapor deposition method by plasma ionization
WO2014129039A1 (en) * 2013-02-21 2014-08-28 中外炉工業株式会社 Film formation method and film formation device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200755A (en) * 1983-04-22 1984-11-14 ホワイト・エンジニアリング・コ−パレイシヤン Ion plating process
JPS6465261A (en) * 1987-05-25 1989-03-10 Takayuki Katsube Vapor deposition method by plasma ionization
WO2014129039A1 (en) * 2013-02-21 2014-08-28 中外炉工業株式会社 Film formation method and film formation device
JP2014162931A (en) * 2013-02-21 2014-09-08 Chugai Ro Co Ltd Film deposition method and film deposition apparatus
CN104995330A (en) * 2013-02-21 2015-10-21 中外炉工业株式会社 Film formation method and film formation device

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