JPS558089A - Production method of semiconductor and its production jig - Google Patents
Production method of semiconductor and its production jigInfo
- Publication number
- JPS558089A JPS558089A JP8131978A JP8131978A JPS558089A JP S558089 A JPS558089 A JP S558089A JP 8131978 A JP8131978 A JP 8131978A JP 8131978 A JP8131978 A JP 8131978A JP S558089 A JPS558089 A JP S558089A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- support board
- growth
- film
- sphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To avoid touching a touched section of a base body's support board with a reactive gas and producing a crack at the time of disconnecting of a base plate by putting a semiconductor body into a score with a phase growth sphere for growth and disconnecting it from the support board with a chemical method after the growth. CONSTITUTION:An oxidant film in the one main face of a semiconductor base plate 11 or a nitrozenous film on the oxidant film is formed as a protective film 12 which is designed to put the base plate 11 on the support board 23 to touch to the board 23. Then a phase growth is made, then a growth layer is produced on the support board 23 and at the side of the base plate 11 which sticks to the support board 23 in the form to be buried in crystals. But the support board side of the base plate 11 doosn't touch to a reactive gas. Then the protective film 41 is coated to the phase growth sphere 23, and the sphere 23 produced on the support board 23 and the base plate 11 side is taken away by etching a liquid and the base plate 11 is disconnected from the support board to thus ensure on crack in the base plate 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8131978A JPS558089A (en) | 1978-07-03 | 1978-07-03 | Production method of semiconductor and its production jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8131978A JPS558089A (en) | 1978-07-03 | 1978-07-03 | Production method of semiconductor and its production jig |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS558089A true JPS558089A (en) | 1980-01-21 |
Family
ID=13743070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8131978A Pending JPS558089A (en) | 1978-07-03 | 1978-07-03 | Production method of semiconductor and its production jig |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS558089A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58145716A (en) * | 1982-02-25 | 1983-08-30 | Kazuo Saotome | Graft polymer composition |
-
1978
- 1978-07-03 JP JP8131978A patent/JPS558089A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58145716A (en) * | 1982-02-25 | 1983-08-30 | Kazuo Saotome | Graft polymer composition |
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