JPS5580333A - Manufacture of mos semiconductor device - Google Patents
Manufacture of mos semiconductor deviceInfo
- Publication number
- JPS5580333A JPS5580333A JP15355078A JP15355078A JPS5580333A JP S5580333 A JPS5580333 A JP S5580333A JP 15355078 A JP15355078 A JP 15355078A JP 15355078 A JP15355078 A JP 15355078A JP S5580333 A JPS5580333 A JP S5580333A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- island
- sio
- islands
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To prevent interleakage by the structure such that an Si-layer is grown on an insulation substrate, this is oxidized by using SiO2 film and Si3N4 film as mask, the Si-layer is divided into two islands with their ends made smooth, and a MOS element is formed on each.
CONSTITUTION: Intrinsic Si-layer 2 is grown on sapphire substrate 1, and a laminate of SiO2 film 17 and Si3N4 film 18 is coated on the entire surface. Only film 18 is removed partially by etching it with resist fim 19 used as mask. Next, film 19 is removed. By operating heat treatment, layer 2, including the exposed part of film 17, is converted into thick SiO2 film reaching substrate 1. Film 18 is removed. By this, layer 2 is divided by film 10 into two islands 2a and 2b with their ends made smooth. Island 2b is covered with resist film 21, and island 2a is injected with ions, and thereby the specified conduction type is obtained. Subsequently, film 21 is removed, and source-drain region 3, gate oxide film 4, gate electrode 5, etc. are formed on each island.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15355078A JPS5580333A (en) | 1978-12-11 | 1978-12-11 | Manufacture of mos semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15355078A JPS5580333A (en) | 1978-12-11 | 1978-12-11 | Manufacture of mos semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5580333A true JPS5580333A (en) | 1980-06-17 |
JPS616548B2 JPS616548B2 (en) | 1986-02-27 |
Family
ID=15564951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15355078A Granted JPS5580333A (en) | 1978-12-11 | 1978-12-11 | Manufacture of mos semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5580333A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215643U (en) * | 1988-07-14 | 1990-01-31 |
-
1978
- 1978-12-11 JP JP15355078A patent/JPS5580333A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS616548B2 (en) | 1986-02-27 |
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