JPS5577172A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5577172A JPS5577172A JP15002578A JP15002578A JPS5577172A JP S5577172 A JPS5577172 A JP S5577172A JP 15002578 A JP15002578 A JP 15002578A JP 15002578 A JP15002578 A JP 15002578A JP S5577172 A JPS5577172 A JP S5577172A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- collector
- side base
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To eliminate deelectric breakdowns between collector and base and to reduce the width of interconnections, by providing main base and base contact existing in side base region such that they do not have mutually overlapping resions.
CONSTITUTION: n+-Buried type layer 3, n-epitaxial layer 2, isolation layers 4a through 4c and collector layers 5a and 5b are formed on p-type Si 1. Although p+-side base 6 is formed adjoining the layer 4c for taking out of an electrode, p- main base layer 7 slightly overlaps the layer 6. An emitter layer 8 is formed on the layer 7. In this mechanism, only the side base layer 6 adjoins the isolation layer 4c, the collector layer 5b is not exposed at the time of photoetching, and difference in level on wiring layer 10 is lessened, and therefore, collector-base leak and dielectric resistance deterioration can be prevented enabling wiring to become available in extremely small size.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15002578A JPS5577172A (en) | 1978-12-06 | 1978-12-06 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15002578A JPS5577172A (en) | 1978-12-06 | 1978-12-06 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5577172A true JPS5577172A (en) | 1980-06-10 |
Family
ID=15487842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15002578A Pending JPS5577172A (en) | 1978-12-06 | 1978-12-06 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5577172A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61248558A (en) * | 1985-04-26 | 1986-11-05 | Matsushita Electronics Corp | Bipolar transistor |
WO1987001238A1 (en) * | 1985-08-19 | 1987-02-26 | Motorola, Inc. | Fabricating a semiconductor device with buried oxide |
US5731623A (en) * | 1993-10-07 | 1998-03-24 | Kabushiki Kaisha Toshiba | Bipolar device with trench structure |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5411683A (en) * | 1977-06-27 | 1979-01-27 | Siemens Ag | Method of producing hf transistor |
-
1978
- 1978-12-06 JP JP15002578A patent/JPS5577172A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5411683A (en) * | 1977-06-27 | 1979-01-27 | Siemens Ag | Method of producing hf transistor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61248558A (en) * | 1985-04-26 | 1986-11-05 | Matsushita Electronics Corp | Bipolar transistor |
WO1987001238A1 (en) * | 1985-08-19 | 1987-02-26 | Motorola, Inc. | Fabricating a semiconductor device with buried oxide |
US5731623A (en) * | 1993-10-07 | 1998-03-24 | Kabushiki Kaisha Toshiba | Bipolar device with trench structure |
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