JPS5577172A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5577172A
JPS5577172A JP15002578A JP15002578A JPS5577172A JP S5577172 A JPS5577172 A JP S5577172A JP 15002578 A JP15002578 A JP 15002578A JP 15002578 A JP15002578 A JP 15002578A JP S5577172 A JPS5577172 A JP S5577172A
Authority
JP
Japan
Prior art keywords
layer
base
collector
side base
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15002578A
Other languages
Japanese (ja)
Inventor
Hironori Kitabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP15002578A priority Critical patent/JPS5577172A/en
Publication of JPS5577172A publication Critical patent/JPS5577172A/en
Pending legal-status Critical Current

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Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To eliminate deelectric breakdowns between collector and base and to reduce the width of interconnections, by providing main base and base contact existing in side base region such that they do not have mutually overlapping resions.
CONSTITUTION: n+-Buried type layer 3, n-epitaxial layer 2, isolation layers 4a through 4c and collector layers 5a and 5b are formed on p-type Si 1. Although p+-side base 6 is formed adjoining the layer 4c for taking out of an electrode, p- main base layer 7 slightly overlaps the layer 6. An emitter layer 8 is formed on the layer 7. In this mechanism, only the side base layer 6 adjoins the isolation layer 4c, the collector layer 5b is not exposed at the time of photoetching, and difference in level on wiring layer 10 is lessened, and therefore, collector-base leak and dielectric resistance deterioration can be prevented enabling wiring to become available in extremely small size.
COPYRIGHT: (C)1980,JPO&Japio
JP15002578A 1978-12-06 1978-12-06 Semiconductor device Pending JPS5577172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15002578A JPS5577172A (en) 1978-12-06 1978-12-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15002578A JPS5577172A (en) 1978-12-06 1978-12-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5577172A true JPS5577172A (en) 1980-06-10

Family

ID=15487842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15002578A Pending JPS5577172A (en) 1978-12-06 1978-12-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5577172A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248558A (en) * 1985-04-26 1986-11-05 Matsushita Electronics Corp Bipolar transistor
WO1987001238A1 (en) * 1985-08-19 1987-02-26 Motorola, Inc. Fabricating a semiconductor device with buried oxide
US5731623A (en) * 1993-10-07 1998-03-24 Kabushiki Kaisha Toshiba Bipolar device with trench structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411683A (en) * 1977-06-27 1979-01-27 Siemens Ag Method of producing hf transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411683A (en) * 1977-06-27 1979-01-27 Siemens Ag Method of producing hf transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248558A (en) * 1985-04-26 1986-11-05 Matsushita Electronics Corp Bipolar transistor
WO1987001238A1 (en) * 1985-08-19 1987-02-26 Motorola, Inc. Fabricating a semiconductor device with buried oxide
US5731623A (en) * 1993-10-07 1998-03-24 Kabushiki Kaisha Toshiba Bipolar device with trench structure

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