JPS5572082A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5572082A JPS5572082A JP14748278A JP14748278A JPS5572082A JP S5572082 A JPS5572082 A JP S5572082A JP 14748278 A JP14748278 A JP 14748278A JP 14748278 A JP14748278 A JP 14748278A JP S5572082 A JPS5572082 A JP S5572082A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- transistor
- type
- terminal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain a multi-input gate circuit with a less occupation area per gate circuit by making the driver transistor alone as a multi-layer construction in a gate circuit of a MOS semiconductor device.
CONSTITUTION: An n-type drain region 2 and an n-type source region 3 are formed by diffusion on a p-type Si substrate 4 to produce a channel region 5 comprising an n-type inversion layer therebetween. Then, on the channel region, a gate insulating layer 6 having two gate electrodes 1a and 1b buried is provided to make an n channel 2 layer gate transistor. In such a manner, a load transistor 11 and a driver transistor 12 are formed on one substrate and connected in series. The connection point of the transistors is connected to an output terminal while the other ends of the transistors each to the power source terminal 9 and the ground terminal 10. In addition, the first gate or the transistor 12 is connected to the input terminal 7a while the second gate thereof to the input terminal 7b.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14748278A JPS5572082A (en) | 1978-11-25 | 1978-11-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14748278A JPS5572082A (en) | 1978-11-25 | 1978-11-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5572082A true JPS5572082A (en) | 1980-05-30 |
Family
ID=15431385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14748278A Pending JPS5572082A (en) | 1978-11-25 | 1978-11-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5572082A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5646428A (en) * | 1994-07-05 | 1997-07-08 | Sanyo Electric Co., Ltd. | Output circuit provided with source follower circuit having depletion type MOS transistor |
-
1978
- 1978-11-25 JP JP14748278A patent/JPS5572082A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5646428A (en) * | 1994-07-05 | 1997-07-08 | Sanyo Electric Co., Ltd. | Output circuit provided with source follower circuit having depletion type MOS transistor |
US5912483A (en) * | 1994-07-05 | 1999-06-15 | Sanyo Electric Company, Ltd. | Output circuit provided with source follower circuit having depletion type MOS transistor |
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