JPS5571693A - Production of single crystal - Google Patents
Production of single crystalInfo
- Publication number
- JPS5571693A JPS5571693A JP14417778A JP14417778A JPS5571693A JP S5571693 A JPS5571693 A JP S5571693A JP 14417778 A JP14417778 A JP 14417778A JP 14417778 A JP14417778 A JP 14417778A JP S5571693 A JPS5571693 A JP S5571693A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- single crystal
- concn
- raw material
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To obtain a high purity silicon single crystal by heating the inside of a chamber covering a crucible, etc. to a predetermined temp.; detecting a point of time at which the concn. of CO in the chamber becomes a predetermined value or less; and melting raw material in the crucible.
CONSTITUTION: Raw material polysilicon is charged into a crucible in a chamber, and the chamber is hermetically sealed. By continuously feeding Ar gas and evacuating the chamber an Ar gas atmosphere is formed in the chamber, and the chamber is preheated to a high temp. just below the melting temp. of the solid raw material. The concn. of CO in the chamber is then monitored with a detector such as a gas chromatograph. After confirming a CO concn. peak of several hundreds ppm and detection-confirming a preset CO concn. of about 10ppm, the raw material is melted with a heater to produce a smiconductor silicon single crystal with a usual single crystal pulling device. As a result, unlike a convnetional method CO, CO2, etc. generated from the structure are prevented from dissolving in the molten Si, so high purity is provided to the single crystal.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14417778A JPS5571693A (en) | 1978-11-24 | 1978-11-24 | Production of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14417778A JPS5571693A (en) | 1978-11-24 | 1978-11-24 | Production of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5571693A true JPS5571693A (en) | 1980-05-29 |
Family
ID=15355986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14417778A Pending JPS5571693A (en) | 1978-11-24 | 1978-11-24 | Production of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5571693A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009043946A1 (en) * | 2009-09-04 | 2011-03-17 | G+R Technology Group Ag | Plant and method for controlling the plant for the production of polycrystalline silicon |
| JP2017114709A (en) * | 2015-12-22 | 2017-06-29 | 信越半導体株式会社 | Single crystal manufacturing apparatus and manufacturing method for single crystal |
-
1978
- 1978-11-24 JP JP14417778A patent/JPS5571693A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009043946A1 (en) * | 2009-09-04 | 2011-03-17 | G+R Technology Group Ag | Plant and method for controlling the plant for the production of polycrystalline silicon |
| JP2017114709A (en) * | 2015-12-22 | 2017-06-29 | 信越半導体株式会社 | Single crystal manufacturing apparatus and manufacturing method for single crystal |
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