JPS556875A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS556875A JPS556875A JP7954478A JP7954478A JPS556875A JP S556875 A JPS556875 A JP S556875A JP 7954478 A JP7954478 A JP 7954478A JP 7954478 A JP7954478 A JP 7954478A JP S556875 A JPS556875 A JP S556875A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- junction
- depletion layer
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000011521 glass Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 230000002411 adverse Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a stable high resisting-pressure element, by avoiding adverse effects on a flank due to cutting, etc. by suppressing the undesirable extent of a depletion layer by using glass with minus charge in a film, which can easily extend the depletion layer, as the protective film. CONSTITUTION:An end surface of a PN junction 3 formed by diffusing P type impurities on a N type substrate 1 is protected by means of an insulating film 4. The insulating film 4 is a glass insulating film that lead system glass powder is sticked and is made up by means of burning fusion. A metallic film 6 with strong reducing power is mounted on the insulating film 4 of circumferential portions outer than a junction end so as to surround the junction 3. Since minus charge is effectively induced to a P type substrate 1 under the insulating film 4, to which the metallic film 6 is evaporated, and fulfills its duties as a channel stopper, the extension of a depletion layer is obstructed, thus obtaining a stable high resisting-pressure element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7954478A JPS556875A (en) | 1978-06-29 | 1978-06-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7954478A JPS556875A (en) | 1978-06-29 | 1978-06-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS556875A true JPS556875A (en) | 1980-01-18 |
Family
ID=13692930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7954478A Pending JPS556875A (en) | 1978-06-29 | 1978-06-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS556875A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6070761A (en) * | 1983-09-27 | 1985-04-22 | Shindengen Electric Mfg Co Ltd | Semiconductor device |
US6670688B2 (en) | 2001-08-22 | 2003-12-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including at least one schottky metal layer surrounding PN junction |
US10347874B2 (en) | 2010-04-07 | 2019-07-09 | Murata Manufacturing Co., Ltd. | Battery pack and method for making same |
-
1978
- 1978-06-29 JP JP7954478A patent/JPS556875A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6070761A (en) * | 1983-09-27 | 1985-04-22 | Shindengen Electric Mfg Co Ltd | Semiconductor device |
US6670688B2 (en) | 2001-08-22 | 2003-12-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including at least one schottky metal layer surrounding PN junction |
US10347874B2 (en) | 2010-04-07 | 2019-07-09 | Murata Manufacturing Co., Ltd. | Battery pack and method for making same |
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