JPS5567168A - Preparation of insulating gate type field-effect transistor - Google Patents

Preparation of insulating gate type field-effect transistor

Info

Publication number
JPS5567168A
JPS5567168A JP14067178A JP14067178A JPS5567168A JP S5567168 A JPS5567168 A JP S5567168A JP 14067178 A JP14067178 A JP 14067178A JP 14067178 A JP14067178 A JP 14067178A JP S5567168 A JPS5567168 A JP S5567168A
Authority
JP
Japan
Prior art keywords
layer
opened
oxide film
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14067178A
Other languages
Japanese (ja)
Inventor
Yoshimi Hirata
Akio Kayanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP14067178A priority Critical patent/JPS5567168A/en
Publication of JPS5567168A publication Critical patent/JPS5567168A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To simply obtain an IG-FFET with a high integrating degree, by mounting a channel stopper in a self-matching shape without treating the whole at high temperatures for a long time while making the best use of the merits of the controllability of an ion injection method.
CONSTITUTION: An n-type ion injecting layer 24 is manufactured on a p-type Si substrate 21 through an oxide film, and an oxide film 29 is grown in a gaseous-phase shape. A hole is opened to the film 29, a hole is opened to the ion injecting layer 24 by etching the layer by plasma by the mixed gas of CF4 and O2 and the substrate 21 is partially removed. When a gate oxide film 30 is produced on a surface of the substrate, a window is opened, the electrode layers 26, 28 of poly Si are selectively made up and n+-layers 22, 23 are prepared by means of phosphor ion injection, phosphor is also added from the electrode layer 28, and the n+-layer become deep in a field oxide film. The whole is coated with an SiO2 film 39, windows are opened and Al electrodes 37, 38 are manufactured. Thus, an integrating degree can sharply be improved if the layer 24 is prepared by excellently controlling the concentration of impurities by means of ion injection, the layer is etched by means of plasma etching in superior working accuracy and the channel stopper region 24 is built up.
COPYRIGHT: (C)1980,JPO&Japio
JP14067178A 1978-11-15 1978-11-15 Preparation of insulating gate type field-effect transistor Pending JPS5567168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14067178A JPS5567168A (en) 1978-11-15 1978-11-15 Preparation of insulating gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14067178A JPS5567168A (en) 1978-11-15 1978-11-15 Preparation of insulating gate type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5567168A true JPS5567168A (en) 1980-05-21

Family

ID=15274044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14067178A Pending JPS5567168A (en) 1978-11-15 1978-11-15 Preparation of insulating gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5567168A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224329A (en) * 1987-03-13 1988-09-19 Fuji Electric Co Ltd Manufacture of semiconductor element
US5006911A (en) * 1989-10-02 1991-04-09 Motorola, Inc. Transistor device with high density contacts

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224329A (en) * 1987-03-13 1988-09-19 Fuji Electric Co Ltd Manufacture of semiconductor element
US5006911A (en) * 1989-10-02 1991-04-09 Motorola, Inc. Transistor device with high density contacts

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