JPS5563868A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5563868A
JPS5563868A JP13748678A JP13748678A JPS5563868A JP S5563868 A JPS5563868 A JP S5563868A JP 13748678 A JP13748678 A JP 13748678A JP 13748678 A JP13748678 A JP 13748678A JP S5563868 A JPS5563868 A JP S5563868A
Authority
JP
Japan
Prior art keywords
region
dielectric strength
transistor
high dielectric
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13748678A
Other languages
Japanese (ja)
Inventor
Hiroyuki Obata
Tojiro Takegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13748678A priority Critical patent/JPS5563868A/en
Publication of JPS5563868A publication Critical patent/JPS5563868A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To provide a high-speed output circuit of small area and high dielectric strength, by using an MOS transistor of high dielectric strength to drive a bipolar transistor whose base region is an insular semiconductor region provided in the semiconductor substrate of a complementary MOS integrated circuit.
CONSTITUTION: A p-type insulator region 2, which is to be the base of a bipolar transistor, and the drain region 10 of an MOS transistor of high dielectric strength are provided in an n-type semiconductor substrate 1. An n+-type emitter region 3, a P+-type source region 5 and a drain contact region 4 are then provided. A gate 6 is provided further. The base region 2 and the drain region 4 are then connected to each other. As a result, the output transistor acts as an emitter follower and a high current amplification factor is obtained. Therefore, a transistor of small area can be used and the switching speed can be raised. A high dielectric strength is obtained because the output transistor is driven by the MOS transistor of high dielectric strength.
COPYRIGHT: (C)1980,JPO&Japio
JP13748678A 1978-11-08 1978-11-08 Semiconductor integrated circuit Pending JPS5563868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13748678A JPS5563868A (en) 1978-11-08 1978-11-08 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13748678A JPS5563868A (en) 1978-11-08 1978-11-08 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5563868A true JPS5563868A (en) 1980-05-14

Family

ID=15199756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13748678A Pending JPS5563868A (en) 1978-11-08 1978-11-08 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5563868A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182563A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS441023Y1 (en) * 1965-02-07 1969-01-16
JPS4839175A (en) * 1971-09-17 1973-06-08
JPS5360582A (en) * 1976-11-12 1978-05-31 Hitachi Ltd Semiconductor ingegrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS441023Y1 (en) * 1965-02-07 1969-01-16
JPS4839175A (en) * 1971-09-17 1973-06-08
JPS5360582A (en) * 1976-11-12 1978-05-31 Hitachi Ltd Semiconductor ingegrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182563A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Semiconductor device

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