JPS5562775A - Field-effect transistor - Google Patents
Field-effect transistorInfo
- Publication number
- JPS5562775A JPS5562775A JP13561578A JP13561578A JPS5562775A JP S5562775 A JPS5562775 A JP S5562775A JP 13561578 A JP13561578 A JP 13561578A JP 13561578 A JP13561578 A JP 13561578A JP S5562775 A JPS5562775 A JP S5562775A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- input
- layer
- output impedance
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To facilitate a matching problem of a high-frequency circuit, by limitting the input and output impedance of a FET within only a pure resistance component.
CONSTITUTION: An n+ layer 2 is stacked on a p type substrate 1, a poly Si layer 3 is mounted to a drain electrode portion, an n- channel layer 4 and an n+ source layer 5 are made up in an epitaxial shape and the electrodes of a source 6, a gate 7 and a drain 8 are added through etching and heat treatment. A JFET in distribution type connection is constituted by connecting each simple substance FET in parallel. When portions among simple substances are connected by means of straight- line conductors in Al with l length, w width and t thickness, the value of inductance is decided by these value. Input and output impedance is built up only by a pure resistance component by changing inductance by adjusting l length, w width and t thickness by the internal feedback capacity of the simple substances FET, the floating capacity of package and the operating frequency of the FET. And when an input gate and an output drain are terminated by means of the desired resistance and the input and output impedance are conformed to the characteristic inpedance of a transmission line, a matching problem can be facilitated or eliminated.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13561578A JPS5562775A (en) | 1978-11-02 | 1978-11-02 | Field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13561578A JPS5562775A (en) | 1978-11-02 | 1978-11-02 | Field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5562775A true JPS5562775A (en) | 1980-05-12 |
Family
ID=15155940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13561578A Pending JPS5562775A (en) | 1978-11-02 | 1978-11-02 | Field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5562775A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5012982A (en) * | 1973-05-22 | 1975-02-10 | ||
JPS5012988A (en) * | 1973-05-19 | 1975-02-10 | ||
JPS5162979A (en) * | 1974-11-29 | 1976-05-31 | Mitsubishi Electric Corp |
-
1978
- 1978-11-02 JP JP13561578A patent/JPS5562775A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5012988A (en) * | 1973-05-19 | 1975-02-10 | ||
JPS5012982A (en) * | 1973-05-22 | 1975-02-10 | ||
JPS5162979A (en) * | 1974-11-29 | 1976-05-31 | Mitsubishi Electric Corp |
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