JPS5550664A - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same

Info

Publication number
JPS5550664A
JPS5550664A JP12402278A JP12402278A JPS5550664A JP S5550664 A JPS5550664 A JP S5550664A JP 12402278 A JP12402278 A JP 12402278A JP 12402278 A JP12402278 A JP 12402278A JP S5550664 A JPS5550664 A JP S5550664A
Authority
JP
Japan
Prior art keywords
region
film
semiconductor device
sio
hcl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12402278A
Other languages
Japanese (ja)
Other versions
JPH0357613B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP12402278A priority Critical patent/JPS5550664A/en
Publication of JPS5550664A publication Critical patent/JPS5550664A/en
Publication of JPH0357613B2 publication Critical patent/JPH0357613B2/ja
Granted legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To shorten the life time of carrier in a semiconductor device by forming a channel region forming an IGFET by non-monocrystalline semiconductor and containing H2, He, Ne or HCl therein to thereby remove the recombination center of the semiconductor device.
CONSTITUTION: Thick SiO2 films 3 are formed on both ends of a p-type silicon substrate 1, and a thin SiO2 film 2 is coated on the surface of the substrate 1 surrounded by the film 3 together with a silicon film 4. Then, inert gas such as H2, He, Ne, etc. or halide such as HCl is implanted by high frequency energy of the like thereto to thereby form a non-monocrystallized channel region 9. Then, a gate SiO2 film 12 and Mo or the like gate electrode 11 are provided on the region 9, the regions 9 disposed at both sides thereof are removed, and n+-type source region 5 and drain region 6 are provided thereat. Thus, when the region 9 is formed by non-monocrystal containing gas or the like, it can remarkably shorten the life time of carrier and improve the mobility of electrons or the like.
COPYRIGHT: (C)1980,JPO&Japio
JP12402278A 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same Granted JPS5550664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12402278A JPS5550664A (en) 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12402278A JPS5550664A (en) 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same

Related Child Applications (5)

Application Number Title Priority Date Filing Date
JP60209746A Division JPH0644573B2 (en) 1985-09-20 1985-09-20 Silicon semiconductor device manufacturing method
JP60209747A Division JPS61116874A (en) 1985-09-20 1985-09-20 Manufacture of semiconductor device
JP5346877A Division JPH07109896B2 (en) 1993-12-27 1993-12-27 Method for manufacturing thin film semiconductor device
JP5346876A Division JP2540724B2 (en) 1993-12-27 1993-12-27 Method for manufacturing semiconductor device
JP5346878A Division JPH07109897B2 (en) 1993-12-27 1993-12-27 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5550664A true JPS5550664A (en) 1980-04-12
JPH0357613B2 JPH0357613B2 (en) 1991-09-02

Family

ID=14875085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12402278A Granted JPS5550664A (en) 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS5550664A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01192173A (en) * 1988-01-27 1989-08-02 Sony Corp Manufacture of semiconductor device
JPH01212445A (en) * 1988-02-19 1989-08-25 Nippon Telegr & Teleph Corp <Ntt> Compensation for interfacial charge in heterojunction
JPH05243273A (en) * 1992-09-21 1993-09-21 Seiko Epson Corp Manufacture of thin film transistor
JPH06163900A (en) * 1982-04-13 1994-06-10 Seiko Epson Corp Thin film transistor
JPH06283550A (en) * 1993-06-18 1994-10-07 Semiconductor Energy Lab Co Ltd Manufacturing method of semiconductor device
JPH06326311A (en) * 1994-04-19 1994-11-25 Semiconductor Energy Lab Co Ltd Mis semiconductor device
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
JPH09167841A (en) * 1983-05-06 1997-06-24 Seiko Epson Corp Manufacture of thin film transistor
US5766977A (en) * 1995-03-27 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6261877B1 (en) 1990-09-11 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055281A (en) * 1973-09-12 1975-05-15
JPS5055277A (en) * 1973-09-12 1975-05-15
JPS511389A (en) * 1974-03-14 1976-01-08 Nat Distillers Chem Corp

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055281A (en) * 1973-09-12 1975-05-15
JPS5055277A (en) * 1973-09-12 1975-05-15
JPS511389A (en) * 1974-03-14 1976-01-08 Nat Distillers Chem Corp

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPH06163900A (en) * 1982-04-13 1994-06-10 Seiko Epson Corp Thin film transistor
JPH09167841A (en) * 1983-05-06 1997-06-24 Seiko Epson Corp Manufacture of thin film transistor
US6680486B1 (en) 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
US6734499B1 (en) 1984-05-18 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US6635520B1 (en) 1984-05-18 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
JPH01192173A (en) * 1988-01-27 1989-08-02 Sony Corp Manufacture of semiconductor device
JP2776820B2 (en) * 1988-01-27 1998-07-16 ソニー株式会社 Method for manufacturing semiconductor device
JPH01212445A (en) * 1988-02-19 1989-08-25 Nippon Telegr & Teleph Corp <Ntt> Compensation for interfacial charge in heterojunction
US6261877B1 (en) 1990-09-11 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6023075A (en) * 1990-12-25 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7855106B2 (en) 1991-08-26 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US7642584B2 (en) 1991-09-25 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JPH05243273A (en) * 1992-09-21 1993-09-21 Seiko Epson Corp Manufacture of thin film transistor
JPH06283550A (en) * 1993-06-18 1994-10-07 Semiconductor Energy Lab Co Ltd Manufacturing method of semiconductor device
JPH07109894B2 (en) * 1993-06-18 1995-11-22 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
JPH06326311A (en) * 1994-04-19 1994-11-25 Semiconductor Energy Lab Co Ltd Mis semiconductor device
JP2785173B2 (en) * 1994-04-19 1998-08-13 株式会社半導体エネルギー研究所 MIS type semiconductor device
US5766977A (en) * 1995-03-27 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device

Also Published As

Publication number Publication date
JPH0357613B2 (en) 1991-09-02

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