JPS5549033A - Transistor switching unit - Google Patents
Transistor switching unitInfo
- Publication number
- JPS5549033A JPS5549033A JP12237578A JP12237578A JPS5549033A JP S5549033 A JPS5549033 A JP S5549033A JP 12237578 A JP12237578 A JP 12237578A JP 12237578 A JP12237578 A JP 12237578A JP S5549033 A JPS5549033 A JP S5549033A
- Authority
- JP
- Japan
- Prior art keywords
- base
- diode
- emitter
- circuit
- approximate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08126—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transitor switches
Landscapes
- Details Of Television Scanning (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To obtain an inexpensive switching Tr circuit with Tr prevented from breaking down by connecting 1st and 2nd transistors Tr in a Darlington circuit and then by connecting a diode between the base and emitter of the 1st Tr. CONSTITUTION:Between the base and emitter of Tr 18 of Darlington Tr circuit 17, diode 22 is reversely connected. As a result, a forward base current cuts off the diode and in case of a reverse bias, a forward voltage of approximate -0.7V of diode 22 is applied to Tr 18 while the remainder is all applied between the base and emitter of Tr 21. Therefore, base-emitter dielectric strength of approximate 2.7V of Tr 21 is sufficinet, only a small collector current of exciting Tr 16 is required and a chip in case of IC-implementation never increases, so that a low-cost unit can be realized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12237578A JPS5549033A (en) | 1978-10-03 | 1978-10-03 | Transistor switching unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12237578A JPS5549033A (en) | 1978-10-03 | 1978-10-03 | Transistor switching unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5549033A true JPS5549033A (en) | 1980-04-08 |
Family
ID=14834277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12237578A Pending JPS5549033A (en) | 1978-10-03 | 1978-10-03 | Transistor switching unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5549033A (en) |
-
1978
- 1978-10-03 JP JP12237578A patent/JPS5549033A/en active Pending
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