JPS5549007A - High-frequency transistor power amplifier - Google Patents

High-frequency transistor power amplifier

Info

Publication number
JPS5549007A
JPS5549007A JP12288678A JP12288678A JPS5549007A JP S5549007 A JPS5549007 A JP S5549007A JP 12288678 A JP12288678 A JP 12288678A JP 12288678 A JP12288678 A JP 12288678A JP S5549007 A JPS5549007 A JP S5549007A
Authority
JP
Japan
Prior art keywords
output
input
strip lines
power amplifier
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12288678A
Other languages
Japanese (ja)
Inventor
Sadahiko Sugiura
Masataka Kairin
Masanori Suzuki
Kazuaki Uchiumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12288678A priority Critical patent/JPS5549007A/en
Publication of JPS5549007A publication Critical patent/JPS5549007A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To make it possible to electric characteristics, a price and reliability by IC-implementing an input-output circuit or inter-stage matching circuit by a distribution constant circuit to be constituted on a CaO-TiO2 dielectric substrate. CONSTITUTION:On high-dielectric substrates 33 and 34 (a CaO-TiO2-based compound with a dielectric constant of 80-200) before and behind of UHF high-output transistor Tr32 provided on earth conductor 31, input and output circuits are IC- implemented and then contained in case 35 serving as the earth conductor for the both, thereby obtaining an UHF Tr power amplifier with input and output connectors 36 and 37 and bias application terminal 38. Next, input and output-side matching circuits consists of open stubs 39 and 40, and 47 and 48 of strip lines, strip lines 41 and 49, DC-block chip capacitors 42 and 50, short stubs 43 and 51 of RF-choking strip lines, and earth terminals 46 and 55 provided on substrates.
JP12288678A 1978-10-04 1978-10-04 High-frequency transistor power amplifier Pending JPS5549007A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12288678A JPS5549007A (en) 1978-10-04 1978-10-04 High-frequency transistor power amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12288678A JPS5549007A (en) 1978-10-04 1978-10-04 High-frequency transistor power amplifier

Publications (1)

Publication Number Publication Date
JPS5549007A true JPS5549007A (en) 1980-04-08

Family

ID=14847061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12288678A Pending JPS5549007A (en) 1978-10-04 1978-10-04 High-frequency transistor power amplifier

Country Status (1)

Country Link
JP (1) JPS5549007A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846665A (en) * 1981-09-12 1983-03-18 Mitsubishi Electric Corp Analog integrated circuit device
JPH01226716A (en) * 1988-03-04 1989-09-11 Asahi Glass Co Ltd Production of granular carbonate from caustic alkali
JPH05102813A (en) * 1991-10-11 1993-04-23 Toshiba Corp Microwave pulse high output transistor
US5821811A (en) * 1995-10-04 1998-10-13 Allgon Ab Bypass device in an amplifier unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846665A (en) * 1981-09-12 1983-03-18 Mitsubishi Electric Corp Analog integrated circuit device
JPH0139219B2 (en) * 1981-09-12 1989-08-18 Mitsubishi Electric Corp
JPH01226716A (en) * 1988-03-04 1989-09-11 Asahi Glass Co Ltd Production of granular carbonate from caustic alkali
JPH05102813A (en) * 1991-10-11 1993-04-23 Toshiba Corp Microwave pulse high output transistor
US5821811A (en) * 1995-10-04 1998-10-13 Allgon Ab Bypass device in an amplifier unit

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