JPS5546539A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS5546539A JPS5546539A JP11981678A JP11981678A JPS5546539A JP S5546539 A JPS5546539 A JP S5546539A JP 11981678 A JP11981678 A JP 11981678A JP 11981678 A JP11981678 A JP 11981678A JP S5546539 A JPS5546539 A JP S5546539A
- Authority
- JP
- Japan
- Prior art keywords
- produced
- substrate
- hole
- film
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To raise the accuracy of adjustment of a mask and the efficiency of work, by providing step parts on the surface of a semiconductor substrate before entirely removing a first oxide film.
CONSTITUTION: A first oxide film 2 is produced on the surface of an N-type silicon substrate 1. A hole 3 for base diffusion is opened through the film 2. A second oxide film 9 is produced on the surface of the substrate 1 exposed through the hole 3. Since the film 9 is produced by the reaction of the substrate 1 with supplied oxygen, step parts of thickness equal to about 40% of that of the oxide film are provided on the substrate 1. The film 9 is then removed. Boron is diffused through the hole 3 so that a boron deposition layer 4 is produced. The film 2 is entirely removed. A diffused base region 5 is produced by boron extension diffusion. A third oxide film 6 is produced. A hole 7 for emitter diffusion is opened. Phosphorus is diffused into the surface of the substrate 1 through the hole 7 so that a diffused emitter region 8 is produced. Because the substrate 1 is provided with the step parts, a mask for making the hole 7 is easily positioned on the region 5. This results in raising the accuracy of adjustment of the mask and greatly shortening the time of work.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11981678A JPS5546539A (en) | 1978-09-27 | 1978-09-27 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11981678A JPS5546539A (en) | 1978-09-27 | 1978-09-27 | Method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5546539A true JPS5546539A (en) | 1980-04-01 |
Family
ID=14770941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11981678A Pending JPS5546539A (en) | 1978-09-27 | 1978-09-27 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5546539A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6159060A (en) * | 1984-08-29 | 1986-03-26 | Shimadzu Corp | Hydraulic machine type transmission |
JPS629625A (en) * | 1985-07-08 | 1987-01-17 | Rohm Co Ltd | Method for formation of microscopic electrode |
-
1978
- 1978-09-27 JP JP11981678A patent/JPS5546539A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6159060A (en) * | 1984-08-29 | 1986-03-26 | Shimadzu Corp | Hydraulic machine type transmission |
JPS629625A (en) * | 1985-07-08 | 1987-01-17 | Rohm Co Ltd | Method for formation of microscopic electrode |
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