JPS5544746A - Manufacture of integrated circuit - Google Patents

Manufacture of integrated circuit

Info

Publication number
JPS5544746A
JPS5544746A JP11819978A JP11819978A JPS5544746A JP S5544746 A JPS5544746 A JP S5544746A JP 11819978 A JP11819978 A JP 11819978A JP 11819978 A JP11819978 A JP 11819978A JP S5544746 A JPS5544746 A JP S5544746A
Authority
JP
Japan
Prior art keywords
film
insulating film
oxidized
integrated circuit
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11819978A
Other languages
Japanese (ja)
Inventor
Nobuhiro Sano
Akira Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11819978A priority Critical patent/JPS5544746A/en
Publication of JPS5544746A publication Critical patent/JPS5544746A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To improve the yeild and reliability of this integrated circuit, by bettering isolation insulation among elements by forming a polycrystal Si portion on a Si oxidized insulating film and by putting an oxidized Al film between the insulating film and the Si portion.
CONSTITUTION: A Si oxide film 14 is formed on a surface of an N-type Si epitaxial layer 12 laminated on an upper surface of a P-type Si substrate 11, an upper portion of the film 14 is coated with a nitrated Si film 10, a window is opened to the film 10, a V-shaped groove is made up by means of etching by a NaOH solution and a Si oxidized insulating film 13 is created to the inside. A polycrystal Si portion 16 is built up on the insulating film 13, and an oxidized Al film 15 is placed between the insulating film 13 and the Si portion 16. Thus, the yield and reliability of this integrated circuit can be advanced because isolation insulation among elements is made better.
COPYRIGHT: (C)1980,JPO&Japio
JP11819978A 1978-09-26 1978-09-26 Manufacture of integrated circuit Pending JPS5544746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11819978A JPS5544746A (en) 1978-09-26 1978-09-26 Manufacture of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11819978A JPS5544746A (en) 1978-09-26 1978-09-26 Manufacture of integrated circuit

Publications (1)

Publication Number Publication Date
JPS5544746A true JPS5544746A (en) 1980-03-29

Family

ID=14730623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11819978A Pending JPS5544746A (en) 1978-09-26 1978-09-26 Manufacture of integrated circuit

Country Status (1)

Country Link
JP (1) JPS5544746A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611386A (en) * 1982-12-27 1986-09-16 Fujitsu Limited Method of producing a semiconductor device
JPH06196551A (en) * 1992-09-04 1994-07-15 Internatl Business Mach Corp <Ibm> Flattening of recessed part surface of semiconductor structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611386A (en) * 1982-12-27 1986-09-16 Fujitsu Limited Method of producing a semiconductor device
JPH06196551A (en) * 1992-09-04 1994-07-15 Internatl Business Mach Corp <Ibm> Flattening of recessed part surface of semiconductor structure

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