JPS5543880A - Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling - Google Patents
Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-couplingInfo
- Publication number
- JPS5543880A JPS5543880A JP11716078A JP11716078A JPS5543880A JP S5543880 A JPS5543880 A JP S5543880A JP 11716078 A JP11716078 A JP 11716078A JP 11716078 A JP11716078 A JP 11716078A JP S5543880 A JPS5543880 A JP S5543880A
- Authority
- JP
- Japan
- Prior art keywords
- specimen
- electrodes
- capacitance
- carrier concentration
- coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To provide a simple and practical method for measuring the carrier concentration of a specimen by means of capacitance-coupling detection using electrodes placed close to the specimen.
CONSTITUTION: Four plate-shaped electrodes 1W4 of arbitrary shape, fitted with thin dielectric film on their surface, are arranged in a plane in a ring form. Specimen 5 is mounted on all of these electrode. When high-frequency voltage 6 is impressed on any two opposing electrodes, of these four, high-frequency current I flows in the specimen via the capacitance between the electrodes and the specimen. This current I is read by ammeter 7. Next, when magnetic field B is set up in the direction perpendicular to the plane of the electrodes, hole voltage VH is generated in the direction perpendicular to the straight line connecting electrodes 1 and 3. This hole volgate VH is capacitance-coupling-detected by electrodes 2, 4 and voltmeter 8. Then, it becomes that hole voltage VH=KBI/ent (e denotes electron charge, t specimen thickness). The proportionality constant K is determined by a specimen of known carrier concentration, and the carrier concentration n of the specimen under measurement is obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11716078A JPS5543880A (en) | 1978-09-22 | 1978-09-22 | Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11716078A JPS5543880A (en) | 1978-09-22 | 1978-09-22 | Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5543880A true JPS5543880A (en) | 1980-03-27 |
Family
ID=14704931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11716078A Pending JPS5543880A (en) | 1978-09-22 | 1978-09-22 | Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5543880A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5881944U (en) * | 1981-11-27 | 1983-06-03 | 株式会社日立製作所 | Semiconductor wafer inspection equipment |
JPS6446944A (en) * | 1987-07-22 | 1989-02-21 | Nippon Denzai Kogyo Kenkyusho | Noncontact device for discriminating semiconductor polality |
WO2007138828A1 (en) * | 2006-05-30 | 2007-12-06 | Shin-Etsu Handotai Co., Ltd. | Method for evaluating soi wafer |
JP2010165832A (en) * | 2009-01-15 | 2010-07-29 | Shin Etsu Handotai Co Ltd | Method of measuring conductivity type and resistivity of semiconductor silicon substrate and method of manufacturing the semiconductor silicon substrate |
-
1978
- 1978-09-22 JP JP11716078A patent/JPS5543880A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5881944U (en) * | 1981-11-27 | 1983-06-03 | 株式会社日立製作所 | Semiconductor wafer inspection equipment |
JPS6242537Y2 (en) * | 1981-11-27 | 1987-10-31 | ||
JPS6446944A (en) * | 1987-07-22 | 1989-02-21 | Nippon Denzai Kogyo Kenkyusho | Noncontact device for discriminating semiconductor polality |
WO2007138828A1 (en) * | 2006-05-30 | 2007-12-06 | Shin-Etsu Handotai Co., Ltd. | Method for evaluating soi wafer |
JP2007324194A (en) * | 2006-05-30 | 2007-12-13 | Shin Etsu Handotai Co Ltd | Evaluation method of soi wafer |
US8089274B2 (en) | 2006-05-30 | 2012-01-03 | Shin-Etsu Handotai Co., Ltd. | Method for evaluating SOI wafer |
JP2010165832A (en) * | 2009-01-15 | 2010-07-29 | Shin Etsu Handotai Co Ltd | Method of measuring conductivity type and resistivity of semiconductor silicon substrate and method of manufacturing the semiconductor silicon substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
O'Konski et al. | Electric Properties of Macromolecules. I. A Study of Electric Polarization in Polyelectrolyte Solutions by Means of Electric Birefringence1 | |
GB1463880A (en) | Apparatus for conductivity measurements | |
Minkov et al. | Study of crack inversions utilizing dipole model of a crack and Hall element measurements | |
JPS5543880A (en) | Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling | |
GB1313351A (en) | Corrosion rate meter | |
Collins et al. | The A. C. field around a plane semi-elliptical crack in a metal surface | |
JPS6429753A (en) | Method for measuring pipe current of metal pipe | |
Sullivan | Wheatstone bridge technique for magnetostriction measurements | |
McClintock | Ionic mobility in liquid 3 He above 0.25 K | |
GB936015A (en) | Improvements in or relating to apparatus for testing of ferro-magnetic material | |
Moron | Differential, three-electrode measurement of electrolytic conductivity | |
JPS5368290A (en) | Insulation resistance measuring apparatus of ground system | |
SU532762A1 (en) | Contactless method of measuring the flow of electrically conductive media | |
JPS5563835A (en) | Defect detector for insulation film | |
JPS55146059A (en) | Measuring method of dielectric constant and its unit | |
JPS5312373A (en) | Measuring apparatus for temperature difference | |
JPS5583866A (en) | Temperature measuring method of plasma in magnetic field | |
JPS5412840A (en) | Measuring method for surface potential of electrophotographic photoreceptor by time series | |
JPS5784145A (en) | Measuring device of deep impurity level in semiconductor | |
JPS6447960A (en) | Method and apparatus for measuring resistivity | |
JPS54105596A (en) | Electrochemical assessing method of local corrosiveness on matal surrface | |
JPS5262479A (en) | Prove device for measurement | |
SU1191845A1 (en) | Method of determining full charge and its distribution centre in dielectrics | |
SU629517A1 (en) | Magnetic core magnetic field induction sensor | |
JPS5737846A (en) | Measuring device for thickness of semiconductor layer |