JPS5543880A - Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling - Google Patents

Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling

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Publication number
JPS5543880A
JPS5543880A JP11716078A JP11716078A JPS5543880A JP S5543880 A JPS5543880 A JP S5543880A JP 11716078 A JP11716078 A JP 11716078A JP 11716078 A JP11716078 A JP 11716078A JP S5543880 A JPS5543880 A JP S5543880A
Authority
JP
Japan
Prior art keywords
specimen
electrodes
capacitance
carrier concentration
coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11716078A
Other languages
Japanese (ja)
Inventor
Takeshi Kizaki
Seijirou Furukawa
Hiroshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP11716078A priority Critical patent/JPS5543880A/en
Publication of JPS5543880A publication Critical patent/JPS5543880A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To provide a simple and practical method for measuring the carrier concentration of a specimen by means of capacitance-coupling detection using electrodes placed close to the specimen.
CONSTITUTION: Four plate-shaped electrodes 1W4 of arbitrary shape, fitted with thin dielectric film on their surface, are arranged in a plane in a ring form. Specimen 5 is mounted on all of these electrode. When high-frequency voltage 6 is impressed on any two opposing electrodes, of these four, high-frequency current I flows in the specimen via the capacitance between the electrodes and the specimen. This current I is read by ammeter 7. Next, when magnetic field B is set up in the direction perpendicular to the plane of the electrodes, hole voltage VH is generated in the direction perpendicular to the straight line connecting electrodes 1 and 3. This hole volgate VH is capacitance-coupling-detected by electrodes 2, 4 and voltmeter 8. Then, it becomes that hole voltage VH=KBI/ent (e denotes electron charge, t specimen thickness). The proportionality constant K is determined by a specimen of known carrier concentration, and the carrier concentration n of the specimen under measurement is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP11716078A 1978-09-22 1978-09-22 Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling Pending JPS5543880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11716078A JPS5543880A (en) 1978-09-22 1978-09-22 Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11716078A JPS5543880A (en) 1978-09-22 1978-09-22 Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling

Publications (1)

Publication Number Publication Date
JPS5543880A true JPS5543880A (en) 1980-03-27

Family

ID=14704931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11716078A Pending JPS5543880A (en) 1978-09-22 1978-09-22 Non-contact measurement of semiconductor carrier concentration and conductivity by capacitance-coupling

Country Status (1)

Country Link
JP (1) JPS5543880A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5881944U (en) * 1981-11-27 1983-06-03 株式会社日立製作所 Semiconductor wafer inspection equipment
JPS6446944A (en) * 1987-07-22 1989-02-21 Nippon Denzai Kogyo Kenkyusho Noncontact device for discriminating semiconductor polality
WO2007138828A1 (en) * 2006-05-30 2007-12-06 Shin-Etsu Handotai Co., Ltd. Method for evaluating soi wafer
JP2010165832A (en) * 2009-01-15 2010-07-29 Shin Etsu Handotai Co Ltd Method of measuring conductivity type and resistivity of semiconductor silicon substrate and method of manufacturing the semiconductor silicon substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5881944U (en) * 1981-11-27 1983-06-03 株式会社日立製作所 Semiconductor wafer inspection equipment
JPS6242537Y2 (en) * 1981-11-27 1987-10-31
JPS6446944A (en) * 1987-07-22 1989-02-21 Nippon Denzai Kogyo Kenkyusho Noncontact device for discriminating semiconductor polality
WO2007138828A1 (en) * 2006-05-30 2007-12-06 Shin-Etsu Handotai Co., Ltd. Method for evaluating soi wafer
JP2007324194A (en) * 2006-05-30 2007-12-13 Shin Etsu Handotai Co Ltd Evaluation method of soi wafer
US8089274B2 (en) 2006-05-30 2012-01-03 Shin-Etsu Handotai Co., Ltd. Method for evaluating SOI wafer
JP2010165832A (en) * 2009-01-15 2010-07-29 Shin Etsu Handotai Co Ltd Method of measuring conductivity type and resistivity of semiconductor silicon substrate and method of manufacturing the semiconductor silicon substrate

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