JPS553834B2 - - Google Patents
Info
- Publication number
- JPS553834B2 JPS553834B2 JP2005372A JP2005372A JPS553834B2 JP S553834 B2 JPS553834 B2 JP S553834B2 JP 2005372 A JP2005372 A JP 2005372A JP 2005372 A JP2005372 A JP 2005372A JP S553834 B2 JPS553834 B2 JP S553834B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005372A JPS553834B2 (ja) | 1972-02-26 | 1972-02-26 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005372A JPS553834B2 (ja) | 1972-02-26 | 1972-02-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4919782A JPS4919782A (ja) | 1974-02-21 |
JPS553834B2 true JPS553834B2 (ja) | 1980-01-26 |
Family
ID=12016313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005372A Expired JPS553834B2 (ja) | 1972-02-26 | 1972-02-26 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS553834B2 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19523158A1 (de) * | 1993-12-27 | 1997-01-09 | Toyoda Gosei Kk | Verfahren zur Herstellung von saphirlosen Halbleitern aus einer Nitridverbindung der Gruppe III und durch dieses Verfahren hergestellte Halbleiter |
US5886367A (en) * | 1996-08-07 | 1999-03-23 | Showa Denko K.K. | Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer |
WO2007111255A1 (ja) | 2006-03-24 | 2007-10-04 | Showa Denko K.K. | Iii族窒化物半導体発光素子、iii族窒化物半導体発光素子の製造方法及びランプ |
DE112006002403T5 (de) | 2005-09-07 | 2008-07-10 | Showa Denko K.K. | Verbindungshalbleiter-Bauelement |
WO2009041237A1 (ja) | 2007-09-27 | 2009-04-02 | Showa Denko K.K. | Ⅲ族窒化物半導体発光素子 |
WO2009050955A1 (ja) | 2007-10-19 | 2009-04-23 | Showa Denko K.K. | Ⅲ族窒化物半導体発行素子 |
US7573075B2 (en) | 2004-03-30 | 2009-08-11 | Showa Denko K.K. | Compound semiconductor device, production method of compound semiconductor device and diode |
US7646040B2 (en) | 2002-11-28 | 2010-01-12 | Showa Denko K.K. | Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode |
US7732832B2 (en) | 2004-04-28 | 2010-06-08 | Showa Denko K.K. | Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor |
US8084781B2 (en) | 2005-09-07 | 2011-12-27 | Showa Denko K.K. | Compound semiconductor device |
US8299451B2 (en) | 2005-11-07 | 2012-10-30 | Showa Denko K.K. | Semiconductor light-emitting diode |
US9324912B2 (en) | 2011-05-19 | 2016-04-26 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting element and method for producing same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5198134A (ja) * | 1975-02-25 | 1976-08-28 | ||
JPH0639792Y2 (ja) * | 1988-07-29 | 1994-10-19 | 石川島播磨重工業株式会社 | 篩渣等の定量供給装置 |
JPH04192586A (ja) * | 1990-11-27 | 1992-07-10 | Pioneer Electron Corp | 半導体発光素子 |
US6936863B2 (en) | 2002-11-18 | 2005-08-30 | Showa Denko K.K. | Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3560275A (en) * | 1968-11-08 | 1971-02-02 | Rca Corp | Fabricating semiconductor devices |
-
1972
- 1972-02-26 JP JP2005372A patent/JPS553834B2/ja not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3560275A (en) * | 1968-11-08 | 1971-02-02 | Rca Corp | Fabricating semiconductor devices |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19523158C2 (de) * | 1993-12-27 | 2001-10-31 | Toyoda Gosei Kk | Verfahren zur Herstellung von selbsttragenden Halbleiterschichten aus Al¶x¶Ga¶y¶In¶1¶¶-¶¶x¶¶-¶¶y¶N und Verwendung der Halbleiterschichten |
DE19523158A1 (de) * | 1993-12-27 | 1997-01-09 | Toyoda Gosei Kk | Verfahren zur Herstellung von saphirlosen Halbleitern aus einer Nitridverbindung der Gruppe III und durch dieses Verfahren hergestellte Halbleiter |
US5886367A (en) * | 1996-08-07 | 1999-03-23 | Showa Denko K.K. | Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer |
DE19734034C2 (de) * | 1996-08-07 | 2000-07-13 | Showa Denko Kk | Epitaxiewafer für Licht emittierende Vorrichtung, Verfahren zum Bilden des Wafers und den Wafer verwendende, Licht emittierende Vorrichtung |
US7646040B2 (en) | 2002-11-28 | 2010-01-12 | Showa Denko K.K. | Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode |
US7573075B2 (en) | 2004-03-30 | 2009-08-11 | Showa Denko K.K. | Compound semiconductor device, production method of compound semiconductor device and diode |
US7732832B2 (en) | 2004-04-28 | 2010-06-08 | Showa Denko K.K. | Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor |
US8084781B2 (en) | 2005-09-07 | 2011-12-27 | Showa Denko K.K. | Compound semiconductor device |
DE112006002403T5 (de) | 2005-09-07 | 2008-07-10 | Showa Denko K.K. | Verbindungshalbleiter-Bauelement |
US8299451B2 (en) | 2005-11-07 | 2012-10-30 | Showa Denko K.K. | Semiconductor light-emitting diode |
US8049227B2 (en) | 2006-03-24 | 2011-11-01 | Showa Denko K.K. | Group III nitride semiconductor light emitting device, method for producing the same, and lamp thereof |
WO2007111255A1 (ja) | 2006-03-24 | 2007-10-04 | Showa Denko K.K. | Iii族窒化物半導体発光素子、iii族窒化物半導体発光素子の製造方法及びランプ |
WO2009041237A1 (ja) | 2007-09-27 | 2009-04-02 | Showa Denko K.K. | Ⅲ族窒化物半導体発光素子 |
WO2009050955A1 (ja) | 2007-10-19 | 2009-04-23 | Showa Denko K.K. | Ⅲ族窒化物半導体発行素子 |
US8227790B2 (en) | 2007-10-19 | 2012-07-24 | Showa Denko K.K. | Group III nitride semiconductor light-emitting device |
US9324912B2 (en) | 2011-05-19 | 2016-04-26 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting element and method for producing same |
Also Published As
Publication number | Publication date |
---|---|
JPS4919782A (ja) | 1974-02-21 |