JPS5522853A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS5522853A JPS5522853A JP9582578A JP9582578A JPS5522853A JP S5522853 A JPS5522853 A JP S5522853A JP 9582578 A JP9582578 A JP 9582578A JP 9582578 A JP9582578 A JP 9582578A JP S5522853 A JPS5522853 A JP S5522853A
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- electrode
- film
- resist film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form a desirable shape of an electrode on a solder crystal with an well regeneration rate by performing an alloy processing while leaving a resist film.
CONSTITUTION: A resist film 12 is coated onto a region except an electrode region on the surface of a semiconductor crystal 11. Successively, an electrode metal layer 13 is formed on the film 12. Next, an alloy film 14 is formed in the boundary between the semiconductor crystal 11 and electrode metal layer 13 by a heat treatment under such a condition. Successively, the metal layer 13 except the portions alloyed is removed with the resist film 12. According to such a process, because the metal layer 13 on the film 12 is not contacted directly with a semiconductor, it has no reaction with the semiconductor, and its strain in the heat treatment processing is restricted less and a local contraction of the metal layer is also restricted less, therefore, it is possible to protect the electrode to be transformed from a predetermined shape. If an insulation film is formed between the resist film 12 and crystal 11, the local contraction of the electrode metal is not caused, and the resist film and the metal layer provided thereon can be more easy removed for a more convenience.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9582578A JPS5522853A (en) | 1978-08-08 | 1978-08-08 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9582578A JPS5522853A (en) | 1978-08-08 | 1978-08-08 | Manufacturing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5522853A true JPS5522853A (en) | 1980-02-18 |
Family
ID=14148173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9582578A Pending JPS5522853A (en) | 1978-08-08 | 1978-08-08 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5522853A (en) |
-
1978
- 1978-08-08 JP JP9582578A patent/JPS5522853A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5430777A (en) | Manufacture of semiconductor device | |
| JPS5246784A (en) | Process for production of semiconductor device | |
| JPS5522853A (en) | Manufacturing method of semiconductor device | |
| JPS523390A (en) | Manufacturing method of semiconductor device | |
| JPS5240968A (en) | Process for production of semiconductor device | |
| JPS5421265A (en) | Forming method of semiconductor oxide film | |
| JPS533066A (en) | Electrode formation method | |
| JPS52106675A (en) | Manufacturing method of semiconductor device | |
| JPS5228262A (en) | Process for assembling semiconductor device | |
| JPS52117550A (en) | Electrode formation method | |
| JPS5493970A (en) | Patttern forming method of multi-layer metallic thin film | |
| JPS51111056A (en) | Diffused layer forming method | |
| JPS5371576A (en) | Manufacture of semiconductor device | |
| JPS52113162A (en) | Preparation of semiconductor device | |
| JPS5250166A (en) | Method of forming ohmic contact electrode | |
| JPS53101975A (en) | Treating method of semiconductor substrates | |
| JPS52155055A (en) | Production of semiconductor device | |
| JPS559413A (en) | Manufacturing method of thin film circuit | |
| JPS5367362A (en) | Manufacture of semiconductor device | |
| JPS5512773A (en) | Manufacturing method of semiconductor device | |
| JPS52155050A (en) | Production of semiconductor device | |
| JPS5379382A (en) | Forming method of passivation film | |
| JPS5776832A (en) | Method for forming palladium silicide | |
| JPS5522854A (en) | Manufacturing method of semiconductor device | |
| JPS54140884A (en) | Manufacture of semiconductor device |