JPS5522850A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5522850A
JPS5522850A JP9581878A JP9581878A JPS5522850A JP S5522850 A JPS5522850 A JP S5522850A JP 9581878 A JP9581878 A JP 9581878A JP 9581878 A JP9581878 A JP 9581878A JP S5522850 A JPS5522850 A JP S5522850A
Authority
JP
Japan
Prior art keywords
nozzle
wafer
cut
bevel
jetting port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9581878A
Other languages
Japanese (ja)
Inventor
Isamu Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9581878A priority Critical patent/JPS5522850A/en
Publication of JPS5522850A publication Critical patent/JPS5522850A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To establish a cutting efficiently and raise a yield to a resistence to voltage by permitting the longitudinal direction of nozzle jetting port to cross a tangent of a bevel circumference with an angle less than 90 degrees to be cut preferably.
CONSTITUTION: For example, a powder is jetted from a nozzle by revolving a semiconductor wafer 10 having a pnpn construction, a slot is provided in an element to divide the construction into an element body and protection member. An angle making of the surface of the wafer 10 to the nozzle direction is set so that the junction between the cut slot portion and base layer is cut to have some inclination to the bevel. In cutting that, the nozzle has a slit-like jetting port 28, the longitudinal length of the jetting port 68 is crossed an angle less than 90 degrees to a tangent of the circumference of the bevel, for example, at an angle of 45 degree by revolving the wafer 10. Thus, the wafer 10 is efficiently cut down by a one-time processing and a yield of the resistance to voltage.
COPYRIGHT: (C)1980,JPO&Japio
JP9581878A 1978-08-08 1978-08-08 Manufacturing method of semiconductor device Pending JPS5522850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9581878A JPS5522850A (en) 1978-08-08 1978-08-08 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9581878A JPS5522850A (en) 1978-08-08 1978-08-08 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5522850A true JPS5522850A (en) 1980-02-18

Family

ID=14147991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9581878A Pending JPS5522850A (en) 1978-08-08 1978-08-08 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5522850A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724027A (en) * 1980-07-16 1982-02-08 Tdk Corp Magnetic recording medium
JPH01198073A (en) * 1988-02-03 1989-08-09 Nippon Inter Electronics Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724027A (en) * 1980-07-16 1982-02-08 Tdk Corp Magnetic recording medium
JPH01198073A (en) * 1988-02-03 1989-08-09 Nippon Inter Electronics Corp Manufacture of semiconductor device

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