JPS5521113A - Junction break-down type programmable read-only memory semiconductor device - Google Patents

Junction break-down type programmable read-only memory semiconductor device

Info

Publication number
JPS5521113A
JPS5521113A JP9358478A JP9358478A JPS5521113A JP S5521113 A JPS5521113 A JP S5521113A JP 9358478 A JP9358478 A JP 9358478A JP 9358478 A JP9358478 A JP 9358478A JP S5521113 A JPS5521113 A JP S5521113A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor device
programmable read
down type
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9358478A
Other languages
Japanese (ja)
Other versions
JPS6248389B2 (en
Inventor
Nobuhiko Ono
Tadao Takeda
Katsumi Ogiue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP9358478A priority Critical patent/JPS5521113A/en
Publication of JPS5521113A publication Critical patent/JPS5521113A/en
Publication of JPS6248389B2 publication Critical patent/JPS6248389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To materialize a small emitter area by growing a silicon dioxide selectively. CONSTITUTION:An insulation layer 26 reaching a collector region 21 is provided in a semiconductor member 20 surrounding around an emitter region 28. When the information is written in a memory cell including regions 28, 27 and 21, a PN junction can be broken down between the regions 28 and 27 by a small break-down pulse of a reverse direction to the intermediate portion between an emitter electrode E and collector electrode (food line current absorption terminal) C. Because the memory cell is isolated from the other memory cells adjacent to it or an element in a circumferential circuit by a thick SiO2 film 26, any failure that other elements would be broken down is not occurred when writing the memory cell.
JP9358478A 1978-08-02 1978-08-02 Junction break-down type programmable read-only memory semiconductor device Granted JPS5521113A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9358478A JPS5521113A (en) 1978-08-02 1978-08-02 Junction break-down type programmable read-only memory semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9358478A JPS5521113A (en) 1978-08-02 1978-08-02 Junction break-down type programmable read-only memory semiconductor device

Publications (2)

Publication Number Publication Date
JPS5521113A true JPS5521113A (en) 1980-02-15
JPS6248389B2 JPS6248389B2 (en) 1987-10-13

Family

ID=14086321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9358478A Granted JPS5521113A (en) 1978-08-02 1978-08-02 Junction break-down type programmable read-only memory semiconductor device

Country Status (1)

Country Link
JP (1) JPS5521113A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105365A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor device
JPS5758354A (en) * 1980-09-24 1982-04-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS57140056A (en) * 1981-02-24 1982-08-30 Toshiba Corp Semiconductor storage device
JPS62125663A (en) * 1985-11-26 1987-06-06 Nec Corp Semiconductor memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105365A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor device
JPH0133948B2 (en) * 1979-02-07 1989-07-17 Nippon Electric Co
JPS5758354A (en) * 1980-09-24 1982-04-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS57140056A (en) * 1981-02-24 1982-08-30 Toshiba Corp Semiconductor storage device
JPS62125663A (en) * 1985-11-26 1987-06-06 Nec Corp Semiconductor memory

Also Published As

Publication number Publication date
JPS6248389B2 (en) 1987-10-13

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