JPS5518060A - Inspecting method of semiconductor substrate surface - Google Patents
Inspecting method of semiconductor substrate surfaceInfo
- Publication number
- JPS5518060A JPS5518060A JP9109678A JP9109678A JPS5518060A JP S5518060 A JPS5518060 A JP S5518060A JP 9109678 A JP9109678 A JP 9109678A JP 9109678 A JP9109678 A JP 9109678A JP S5518060 A JPS5518060 A JP S5518060A
- Authority
- JP
- Japan
- Prior art keywords
- substrate surface
- light
- finished substrate
- reflection factor
- spectrophotometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To objectively and accurately inspect a semiconductor substrate surface by measuring the reflecting factor of light on the substrate surface using a spectrophotometer.
CONSTITUTION: A spectrophotometer is so adjusted that the light reflection factor becomes 100% when mirror fisished semiconductor substrates are placed on the standard sepecimen rack and article specimen rach of double luminous flux spectrophotometer. When a chemical polishing finished substrate is placed on the article specimen rack, the reflection factor of the light is measured. The mirror finished substrate surface is optically substantially flat, while the chemically polishing finished substrate surface is optically rugged to thereby cause the surface to scatter the light with the result that the apparent light reflection factor thereof becomes lower than that on the mirror finished substrate surface. The light reflection factor on the chemically polishing finished substrate surface thus obtained exhibits preferable correlation with the glossiness of the gloss sample sorted visually. Thus, it can inspect objectively and accurately as compared with the visual inspection.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9109678A JPS5518060A (en) | 1978-07-25 | 1978-07-25 | Inspecting method of semiconductor substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9109678A JPS5518060A (en) | 1978-07-25 | 1978-07-25 | Inspecting method of semiconductor substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5518060A true JPS5518060A (en) | 1980-02-07 |
Family
ID=14016979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9109678A Pending JPS5518060A (en) | 1978-07-25 | 1978-07-25 | Inspecting method of semiconductor substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5518060A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6034778A (en) * | 1998-04-22 | 2000-03-07 | Hyundai Electronics Industries | Method of measuring surface area variation rate of a polysilicon film having hemispherical grains, and capacitance measuring method and apparatus by the same |
-
1978
- 1978-07-25 JP JP9109678A patent/JPS5518060A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6034778A (en) * | 1998-04-22 | 2000-03-07 | Hyundai Electronics Industries | Method of measuring surface area variation rate of a polysilicon film having hemispherical grains, and capacitance measuring method and apparatus by the same |
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