JPS5516433A - Method of forming multilayer distributing layer - Google Patents
Method of forming multilayer distributing layerInfo
- Publication number
- JPS5516433A JPS5516433A JP8924078A JP8924078A JPS5516433A JP S5516433 A JPS5516433 A JP S5516433A JP 8924078 A JP8924078 A JP 8924078A JP 8924078 A JP8924078 A JP 8924078A JP S5516433 A JPS5516433 A JP S5516433A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- throughholes
- membrane
- distributing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To make needless of etching to form throughholes by removing hotresist membrane after attaching hotresisting membrane over the area for forming throughholes of a distributing layer and laminating the layer insulators by means of anodic oxidation of the distributing layer surface.
CONSTITUTION: To attach hotresist membrane 15 over the area for forming the prescribed throughholes of the distributing area 11 which is formed on the base 12 using the metal such as Al etc. capable of anodic oxidation, and then to perform anodic oxidation 13 of the surface of the distributing layer 11. Next, after forming by lamination a layer insulating layer such as a silicon oxide layer etc. made by a spattering method, the hot resist membrane 15 will be removed with resist stripping fluid to form the required throughholes 17. By doing so, there is no need of etching with hydrofluoric etching fluid for forming throughholes, a damage of distributing pattern as well as the generation of oxidised membrane will be prevented to provide multilayer distributing layer of high quality.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8924078A JPS5516433A (en) | 1978-07-21 | 1978-07-21 | Method of forming multilayer distributing layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8924078A JPS5516433A (en) | 1978-07-21 | 1978-07-21 | Method of forming multilayer distributing layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5516433A true JPS5516433A (en) | 1980-02-05 |
Family
ID=13965211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8924078A Pending JPS5516433A (en) | 1978-07-21 | 1978-07-21 | Method of forming multilayer distributing layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5516433A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02214143A (en) * | 1989-02-15 | 1990-08-27 | Hitachi Ltd | Thin-film electronic circuit |
| JPH11354797A (en) * | 1999-06-02 | 1999-12-24 | Semiconductor Energy Lab Co Ltd | Mis type semiconductor device and its manufacture |
| US6417543B1 (en) | 1993-01-18 | 2002-07-09 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device with sloped gate, source, and drain regions |
| JP2008122317A (en) * | 2006-11-15 | 2008-05-29 | Tokyo Keiso Co Ltd | Ultrasonic flow meter for gas |
-
1978
- 1978-07-21 JP JP8924078A patent/JPS5516433A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02214143A (en) * | 1989-02-15 | 1990-08-27 | Hitachi Ltd | Thin-film electronic circuit |
| US6417543B1 (en) | 1993-01-18 | 2002-07-09 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device with sloped gate, source, and drain regions |
| US6984551B2 (en) | 1993-01-18 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
| US7351624B2 (en) | 1993-01-18 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | MIS semiconductor device and method of fabricating the same |
| JPH11354797A (en) * | 1999-06-02 | 1999-12-24 | Semiconductor Energy Lab Co Ltd | Mis type semiconductor device and its manufacture |
| JP2008122317A (en) * | 2006-11-15 | 2008-05-29 | Tokyo Keiso Co Ltd | Ultrasonic flow meter for gas |
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