JPS55162628A - Wave shaping circuit - Google Patents

Wave shaping circuit

Info

Publication number
JPS55162628A
JPS55162628A JP6984279A JP6984279A JPS55162628A JP S55162628 A JPS55162628 A JP S55162628A JP 6984279 A JP6984279 A JP 6984279A JP 6984279 A JP6984279 A JP 6984279A JP S55162628 A JPS55162628 A JP S55162628A
Authority
JP
Japan
Prior art keywords
cmos inverter
circuit
wave shaping
shaping circuit
clocked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6984279A
Other languages
Japanese (ja)
Inventor
Akihiro Nishizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6984279A priority Critical patent/JPS55162628A/en
Publication of JPS55162628A publication Critical patent/JPS55162628A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H03K3/3545—Stabilisation of output, e.g. using crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manipulation Of Pulses (AREA)

Abstract

PURPOSE:To enable to make the stop voltage to a very low voltage, by making variable the mutual conductance of the inversion amplifying circuit, through the detection of wear of battery automatically. CONSTITUTION:A crystal oscillation circuit 7 is formed with a parallel connection of CMOS inverter 4, clocked CMOS inverter 9, resistor RF and crystal oscillator. The wave shaping circuit 8 is formed with a parallel connection of CMOS inverter 10, and clocked CMOS inverter 11 taking the signals A, B as clock inputs. Further, the internl circuit 5 consists of the frequency dividing circuit receiving the output of the wave shaping circuit 8. When the terminal voltage of the battery is lowered, the clocked CMOS inverter 11 is automtically in parallel connetion, the wave shaping is made with two sets of inverters 10 and 11, to increases the mutual conductance equivalently.
JP6984279A 1979-06-06 1979-06-06 Wave shaping circuit Pending JPS55162628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6984279A JPS55162628A (en) 1979-06-06 1979-06-06 Wave shaping circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6984279A JPS55162628A (en) 1979-06-06 1979-06-06 Wave shaping circuit

Publications (1)

Publication Number Publication Date
JPS55162628A true JPS55162628A (en) 1980-12-18

Family

ID=13414452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6984279A Pending JPS55162628A (en) 1979-06-06 1979-06-06 Wave shaping circuit

Country Status (1)

Country Link
JP (1) JPS55162628A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993005466A1 (en) * 1991-09-04 1993-03-18 Seiko Epson Corporation Oscillator
WO2017129767A1 (en) * 2016-01-29 2017-08-03 Abb Schweiz Ag Failure tolerant capacitor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993005466A1 (en) * 1991-09-04 1993-03-18 Seiko Epson Corporation Oscillator
WO2017129767A1 (en) * 2016-01-29 2017-08-03 Abb Schweiz Ag Failure tolerant capacitor device
CN108496086A (en) * 2016-01-29 2018-09-04 Abb瑞士股份有限公司 Failure allows capacitor device
CN108496086B (en) * 2016-01-29 2019-07-05 Abb瑞士股份有限公司 Failure allows capacitor device
US10386403B2 (en) 2016-01-29 2019-08-20 Abb Schweiz Ag Failure tolerant capacitor device

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