JPS55161240A - Photomask - Google Patents

Photomask

Info

Publication number
JPS55161240A
JPS55161240A JP6887779A JP6887779A JPS55161240A JP S55161240 A JPS55161240 A JP S55161240A JP 6887779 A JP6887779 A JP 6887779A JP 6887779 A JP6887779 A JP 6887779A JP S55161240 A JPS55161240 A JP S55161240A
Authority
JP
Japan
Prior art keywords
metal
film
hard mask
conventional hard
evaporation deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6887779A
Other languages
Japanese (ja)
Inventor
Masaki Furusawa
Chihiro Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP6887779A priority Critical patent/JPS55161240A/en
Publication of JPS55161240A publication Critical patent/JPS55161240A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To enable durability to be enhanced, by forming on a conventional hard mask a film having transparency and electric conductance by evaporation deposition or the like. CONSTITUTION:Light-transmitting conductive film 4 is formed on a conventional hard mask by evaporation deposition, nonelectrolytic metal plating, spraying, or the like method. It is preferable for film 4 to have a 400-550mmu wavelength light transmittance of 60% or more, a surface electric resistance of 1kOMEGA/cm<2> or less, and a thickness of 1-100mmu, and to be of metal Cr, Au, Ag, Sn, or Ta, or of the following oxide of metal: Cr, Sn, In, Fe, Pt, Ta, or Ti.
JP6887779A 1979-06-04 1979-06-04 Photomask Pending JPS55161240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6887779A JPS55161240A (en) 1979-06-04 1979-06-04 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6887779A JPS55161240A (en) 1979-06-04 1979-06-04 Photomask

Publications (1)

Publication Number Publication Date
JPS55161240A true JPS55161240A (en) 1980-12-15

Family

ID=13386321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6887779A Pending JPS55161240A (en) 1979-06-04 1979-06-04 Photomask

Country Status (1)

Country Link
JP (1) JPS55161240A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660941U (en) * 1979-10-18 1981-05-23
JPS57182741A (en) * 1981-05-07 1982-11-10 Dainippon Printing Co Ltd Photomask blank plate
JPS58138028A (en) * 1982-02-12 1983-08-16 Hitachi Ltd Correcting method for photo mask defect
JPS59135468A (en) * 1983-01-24 1984-08-03 Nec Corp Exposing mask
JPS6189854U (en) * 1984-11-20 1986-06-11
JPS6280655A (en) * 1985-10-04 1987-04-14 Toppan Printing Co Ltd Photomask blank and photomask
JP6767601B1 (en) * 2019-04-10 2020-10-14 Dic株式会社 Photomask
WO2020208848A1 (en) * 2019-04-10 2020-10-15 Dic株式会社 Photo mask
US10838295B2 (en) * 2017-05-04 2020-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and fabrication method therefor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660941U (en) * 1979-10-18 1981-05-23
JPS57182741A (en) * 1981-05-07 1982-11-10 Dainippon Printing Co Ltd Photomask blank plate
JPS6322301B2 (en) * 1981-05-07 1988-05-11 Dainippon Printing Co Ltd
JPS58138028A (en) * 1982-02-12 1983-08-16 Hitachi Ltd Correcting method for photo mask defect
JPS634173B2 (en) * 1982-02-12 1988-01-27 Hitachi Ltd
JPS6258501B2 (en) * 1983-01-24 1987-12-07 Nippon Electric Co
JPS59135468A (en) * 1983-01-24 1984-08-03 Nec Corp Exposing mask
JPS6189854U (en) * 1984-11-20 1986-06-11
JPS6280655A (en) * 1985-10-04 1987-04-14 Toppan Printing Co Ltd Photomask blank and photomask
JPH0414339B2 (en) * 1985-10-04 1992-03-12 Toppan Printing Co Ltd
US10838295B2 (en) * 2017-05-04 2020-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and fabrication method therefor
JP6767601B1 (en) * 2019-04-10 2020-10-14 Dic株式会社 Photomask
WO2020208848A1 (en) * 2019-04-10 2020-10-15 Dic株式会社 Photo mask

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