JPS55157281A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS55157281A
JPS55157281A JP6513979A JP6513979A JPS55157281A JP S55157281 A JPS55157281 A JP S55157281A JP 6513979 A JP6513979 A JP 6513979A JP 6513979 A JP6513979 A JP 6513979A JP S55157281 A JPS55157281 A JP S55157281A
Authority
JP
Japan
Prior art keywords
layer
active layer
clad
clad layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6513979A
Other languages
Japanese (ja)
Other versions
JPS5712312B2 (en
Inventor
Mitsuhiro Yano
Hiroshi Nishi
Kimito Takusagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6513979A priority Critical patent/JPS55157281A/en
Publication of JPS55157281A publication Critical patent/JPS55157281A/en
Publication of JPS5712312B2 publication Critical patent/JPS5712312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve coupling efficiency of a semiconductor light emitting device with other optical systems by a method wherein by a semiconductor layer which has an equal index of refraction as an active layer being formed to be adjacent to it in a side of a clad layer between which the active layer is laid, vertical dispersion of a radiated light beam is suppressed. CONSTITUTION:On a substrate 2 a clad layer 3, a semiconductor layer 4 which has an equal index of refraction as an active layer 6, a clad layer 5, an active layer 6 and a clad layer 7 are succesively laminated. Next thereto on the clad layer 7 a conact layer 8 and a positive side electrode 9 is formed. Next thereto beneath the substrate 2 a negative side electrode is formed. By the semiconductor layer 4 which has an equal index of refraction as the active layer 6 being thus built between the clad layer 3 and the clad layer 5 double humped feature in the electric field distribution is attained over the region at the active layer 6 and the semiconductor layer 4.
JP6513979A 1979-05-25 1979-05-25 Semiconductor light emitting device Granted JPS55157281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6513979A JPS55157281A (en) 1979-05-25 1979-05-25 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6513979A JPS55157281A (en) 1979-05-25 1979-05-25 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS55157281A true JPS55157281A (en) 1980-12-06
JPS5712312B2 JPS5712312B2 (en) 1982-03-10

Family

ID=13278248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6513979A Granted JPS55157281A (en) 1979-05-25 1979-05-25 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS55157281A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780784A (en) * 1980-11-04 1982-05-20 Rca Corp Light emitting diode
JPS6064492A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064491A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064488A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064490A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5962080U (en) * 1982-10-20 1984-04-23 トヨタ自動車株式会社 Engine under cover structure
JPS61179175U (en) * 1985-04-30 1986-11-08

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088989A (en) * 1973-12-10 1975-07-17
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5320786A (en) * 1976-08-10 1978-02-25 Nec Corp Injection type semiconductor laser element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088989A (en) * 1973-12-10 1975-07-17
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5320786A (en) * 1976-08-10 1978-02-25 Nec Corp Injection type semiconductor laser element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780784A (en) * 1980-11-04 1982-05-20 Rca Corp Light emitting diode
JPH0368548B2 (en) * 1980-11-04 1991-10-28 Rca Corp
JPS6064492A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064491A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064488A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064490A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof

Also Published As

Publication number Publication date
JPS5712312B2 (en) 1982-03-10

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